Invention Grant
- Patent Title: Integrated circuit device and method of fabricating integrated circuit
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Application No.: US16244109Application Date: 2019-01-10
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Publication No.: US10756128B2Publication Date: 2020-08-25
- Inventor: Kuo-Chih Lai , Shih-Min Chou , Ko-Wei Lin , Chin-Fu Lin , Wei-Chuan Tsai , Chun-Yao Yang , Chia-Fu Cheng , Yi-Syun Chou , Wei Chen
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@6f44b046
- Main IPC: H01L27/14
- IPC: H01L27/14 ; H01L27/146 ; H01L21/768 ; H01L49/02

Abstract:
An integrated circuit device includes a complementary metal oxide semiconductor (CMOS) image sensor. The complementary metal oxide semiconductor (CMOS) image sensor includes a P-N junction photodiode, a transistor gate, a polysilicon plug and a stacked metal layer. The P-N junction photodiode is disposed in a substrate. The transistor gate and the polysilicon plug are disposed on the substrate, wherein the polysilicon plug is directly connected to the P-N junction photodiode. The stacked metal layer connects the polysilicon plug to the transistor gate, wherein the stacked metal layer includes a lower metal layer and an upper metal layer, and the lower metal layer includes a first metal silicide part contacting to the polysilicon plug. The present invention also provides a method of fabricating said integrated circuit device.
Public/Granted literature
- US20200212090A1 INTEGRATED CIRCUIT DEVICE AND METHOD OF FABRICATING INTEGRATED CIRCUIT Public/Granted day:2020-07-02
Information query
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