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公开(公告)号：US11545521B2
公开(公告)日：2023-01-03
申请号：US17157952
申请日：2021-01-25
发明人： Wei Chen , Hui-Lin Wang , Yu-Ru Yang , Chin-Fu Lin , Yi-Syun Chou , Chun-Yao Yang
IPC分类号： H01L27/22 , H01L23/552 , H01L43/10 , H01F41/34 , H01L43/02 , G11C11/16 , H01F10/32 , H01L43/12
摘要： A magnetic tunnel junction (MTJ) device includes two magnetic tunnel junction elements and a magnetic shielding layer. The two magnetic tunnel junction elements are arranged side by side. The magnetic shielding layer is disposed between the magnetic tunnel junction elements. A method of forming said magnetic tunnel junction (MTJ) device includes the following steps. An interlayer including a magnetic shielding layer is formed. The interlayer is etched to form recesses in the interlayer. The magnetic tunnel junction elements fill in the recesses. Or, a method of forming said magnetic tunnel junction (MTJ) device includes the following steps. A magnetic tunnel junction layer is formed. The magnetic tunnel junction layer is patterned to form magnetic tunnel junction elements. An interlayer including a magnetic shielding layer is formed between the magnetic tunnel junction elements.
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公开(公告)号：US10340350B2
公开(公告)日：2019-07-02
申请号：US16044581
申请日：2018-07-25
发明人： Shih-Min Chou , Yun-Tzu Chang , Wei-Ning Chen , Wei-Ming Hsiao , Chia-Chang Hsu , Kuo-Chih Lai , Yang-Ju Lu , Yen-Chen Chen , Chun-Yao Yang
IPC分类号： H01L29/76 , H01L29/94 , H01L29/423 , H01L29/06 , H01L29/49 , H01L29/51 , H01L21/02 , H01L21/28 , H01L21/762 , H01L27/088 , H01L27/092 , H01L21/8238 , H01L21/3213 , H01L21/8234
摘要： A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes an isolation layer, a gate dielectric layer, a tantalum nitride layer, a tantalum oxynitride layer, an n type work function metal layer and a filling metal. The isolation layer is formed on a substrate, and the isolation layer has a first gate trench. The gate dielectric layer is formed in the first gate trench, the tantalum nitride layer is formed on the gate dielectric layer, and the tantalum oxynitride layer is formed on the tantalum nitride layer. The n type work function metal layer is formed on the tantalum oxynitride layer in the first gate trench, and the filling metal is formed on the n type work function metal layer in the first gate trench.
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公开(公告)号：US09722030B1
公开(公告)日：2017-08-01
申请号：US15175045
申请日：2016-06-07
发明人： Ming-Shiou Hsieh , Chun-Yao Yang , Shi-You Liu , Rong-Sin Lin , Han-Ting Yen , Yi-Wei Chen , I-Cheng Hu , Yu-Shu Lin , Neng-Hui Yang
IPC分类号： H01L29/165 , H01L29/167 , H01L23/528 , H01L23/532 , H01L21/265 , H01L21/324 , H01L21/768 , H01L27/088
CPC分类号： H01L29/0847 , H01L21/02532 , H01L21/02639 , H01L21/2257 , H01L21/265 , H01L21/26513 , H01L21/283 , H01L21/324 , H01L21/76877 , H01L21/76897 , H01L21/823425 , H01L21/823475 , H01L23/485 , H01L23/528 , H01L23/53252 , H01L27/088 , H01L27/0886 , H01L29/0649 , H01L29/161 , H01L29/165 , H01L29/167 , H01L29/36 , H01L29/41783 , H01L29/665 , H01L29/66628 , H01L29/66636 , H01L29/7834 , H01L29/7848
摘要： A semiconductor device includes a substrate including a plurality of transistor devices formed thereon, at least an epitaxial structure formed in between the transistor devices, and a tri-layered structure formed on the epitaxial structure. The epitaxial structure includes a first semiconductor material and a second semiconductor material, and a lattice constant of the second semiconductor material is larger than a lattice constant of the first semiconductor material. The tri-layered structure includes an undoped epitaxial layer, a metal-semiconductor compound layer, and a doped epitaxial layer sandwiched in between the undoped epitaxial layer and the metal-semiconductor compound layer. The undoped epitaxial layer and the doped epitaxial layer include at least the second semiconductor material.
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公开(公告)号：US20220320420A1
公开(公告)日：2022-10-06
申请号：US17844741
申请日：2022-06-21
发明人： Kuo-Chih Lai , Yi-Syun Chou , Ko-Wei Lin , Pei-Hsun Kao , Wei Chen , Chia-Fu Cheng , Chun-Yao Yang , Chia-Chang Hsu
摘要： A magnetoresistive random access memory (MRAM) structure includes a magnetic tunnel junction (MTJ), and a top electrode which contacts an end of the MTJ. The top electrode includes a top electrode upper portion and a top electrode lower portion. The width of the top electrode upper portion is larger than the width of the top electrode lower portion. A bottom electrode contacts another end of the MTJ. The top electrode, the MTJ and the bottom electrode form an MRAM.
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公开(公告)号：US20210143212A1
公开(公告)日：2021-05-13
申请号：US17157952
申请日：2021-01-25
发明人： Wei Chen , Hui-Lin Wang , Yu-Ru Yang , Chin-Fu Lin , Yi-Syun Chou , Chun-Yao Yang
IPC分类号： H01L27/22 , H01L23/552 , H01L43/10 , H01F41/34 , H01L43/02 , G11C11/16 , H01F10/32 , H01L43/12
摘要： A magnetic tunnel junction (MTJ) device includes two magnetic tunnel junction elements and a magnetic shielding layer. The two magnetic tunnel junction elements are arranged side by side. The magnetic shielding layer is disposed between the magnetic tunnel junction elements. A method of forming said magnetic tunnel junction (MTJ) device includes the following steps. An interlayer including a magnetic shielding layer is formed. The interlayer is etched to form recesses in the interlayer. The magnetic tunnel junction elements fill in the recesses. Or, a method of forming said magnetic tunnel junction (MTJ) device includes the following steps. A magnetic tunnel junction layer is formed. The magnetic tunnel junction layer is patterned to form magnetic tunnel junction elements. An interlayer including a magnetic shielding layer is formed between the magnetic tunnel junction elements.
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公开(公告)号：US09966434B2
公开(公告)日：2018-05-08
申请号：US15632399
申请日：2017-06-26
发明人： Ming-Shiou Hsieh , Chun-Yao Yang , Shi-You Liu , Rong-Sin Lin , Han-Ting Yen , Yi-Wei Chen , I-Cheng Hu , Yu-Shu Lin , Neng-Hui Yang
IPC分类号： H01L29/08 , H01L21/02 , H01L29/165 , H01L29/36 , H01L21/265 , H01L21/324 , H01L29/167 , H01L21/283 , H01L21/768 , H01L21/8234 , H01L29/417 , H01L29/78 , H01L29/06 , H01L27/088
CPC分类号： H01L29/0847 , H01L21/02532 , H01L21/02639 , H01L21/2257 , H01L21/265 , H01L21/26513 , H01L21/283 , H01L21/324 , H01L21/76877 , H01L21/76897 , H01L21/823425 , H01L21/823475 , H01L23/485 , H01L23/528 , H01L23/53252 , H01L27/088 , H01L27/0886 , H01L29/0649 , H01L29/161 , H01L29/165 , H01L29/167 , H01L29/36 , H01L29/41783 , H01L29/665 , H01L29/66628 , H01L29/66636 , H01L29/7834 , H01L29/7848
摘要： A semiconductor device includes a substrate including a plurality of transistor devices formed thereon, at least an epitaxial structure formed in between the transistor devices, and a tri-layered structure formed on the epitaxial structure. The epitaxial structure includes a first semiconductor material and a second semiconductor material, and a lattice constant of the second semiconductor material is larger than a lattice constant of the first semiconductor material. The tri-layered structure includes an undoped epitaxial layer, a metal-semiconductor compound layer, and a doped epitaxial layer sandwiched in between the undoped epitaxial layer and the metal-semiconductor compound layer. The undoped epitaxial layer and the doped epitaxial layer include at least the second semiconductor material.
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公开(公告)号：US09543408B1
公开(公告)日：2017-01-10
申请号：US14835730
申请日：2015-08-26
发明人： Yi-Hui Lin , Keng-Jen Lin , Chun-Yao Yang , Yu-Ren Wang
IPC分类号： H01L21/3205 , H01L29/66 , H01L21/02 , H01L21/265 , H01L21/324 , H01L21/3213 , H01L21/3215
CPC分类号： H01L29/66545 , H01L21/02532 , H01L21/02592 , H01L21/02667 , H01L21/0274 , H01L21/0337 , H01L21/26513 , H01L21/268 , H01L21/32055 , H01L21/32139 , H01L21/32155 , H01L21/324 , H01L23/544 , H01L29/66795 , H01L2223/54426 , H01L2223/54453
摘要： A method of forming a patterned hark mask layer includes the following steps. A semiconductor substrate is provided. An amorphous silicon layer is formed on the semiconductor substrate. An implantation process is performed on the amorphous silicon layer. An annealing treatment is performed on the amorphous silicon layer after the implantation process. A patterned hard mask layer is formed on the amorphous silicon layer after the annealing treatment.
摘要翻译： 形成图案化掩模掩模层的方法包括以下步骤。 提供半导体衬底。 在半导体衬底上形成非晶硅层。 对非晶硅层进行注入工艺。 在植入处理之后对非晶硅层进行退火处理。 在退火处理之后，在非晶硅层上形成图案化的硬掩模层。
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公开(公告)号：US20130337622A1
公开(公告)日：2013-12-19
申请号：US13971763
申请日：2013-08-20
发明人： Chan-Lon Yang , Ching-Nan Hwang , Chi-Heng Lin , Chun-Yao Yang , Ger-Pin Lin , Ching-I Li
IPC分类号： H01L49/02
CPC分类号： H01L28/24 , H01L21/26593 , H01L21/32155 , H01L21/76224 , H01L27/0629 , H01L28/20
摘要： A semiconductor process is provided, including following steps. A polysilicon layer is formed on a substrate. An asymmetric dual-side heating treatment is performed to the polysilicon layer, wherein a power for a front-side heating is different from a power for a backside heating.
摘要翻译： 提供半导体工艺，包括以下步骤。 在基板上形成多晶硅层。 对多晶硅层进行不对称双面加热处理，其中用于正面加热的功率不同于用于背面加热的功率。
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公开(公告)号：US11950431B2
公开(公告)日：2024-04-02
申请号：US18073574
申请日：2022-12-02
发明人： Wei Chen , Hui-Lin Wang , Yu-Ru Yang , Chin-Fu Lin , Yi-Syun Chou , Chun-Yao Yang
IPC分类号： H01L27/14 , G11C11/16 , H01F10/32 , H01F41/34 , H01L23/552 , H10B61/00 , H10N50/01 , H10N50/80 , H10N50/85
CPC分类号： H10B61/00 , G11C11/161 , H01F10/3254 , H01F41/34 , H01L23/552 , H10N50/01 , H10N50/80 , H10N50/85
摘要： A magnetic tunnel junction (MTJ) device includes two magnetic tunnel junction elements and a magnetic shielding layer. The two magnetic tunnel junction elements are arranged side by side. The magnetic shielding layer is disposed between the magnetic tunnel junction elements. A method of forming said magnetic tunnel junction (MTJ) device includes the following steps. An interlayer including a magnetic shielding layer is formed. The interlayer is etched to form recesses in the interlayer. The magnetic tunnel junction elements fill in the recesses. Or, a method of forming said magnetic tunnel junction (MTJ) device includes the following steps. A magnetic tunnel junction layer is formed. The magnetic tunnel junction layer is patterned to form magnetic tunnel junction elements. An interlayer including a magnetic shielding layer is formed between the magnetic tunnel junction elements.
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公开(公告)号：US20230091364A1
公开(公告)日：2023-03-23
申请号：US18073574
申请日：2022-12-02
发明人： Wei Chen , Hui-Lin Wang , Yu-Ru Yang , Chin-Fu Lin , Yi-Syun Chou , Chun-Yao Yang
IPC分类号： H01L27/22 , H01L23/552 , H01L43/10 , H01F41/34 , H01L43/02 , G11C11/16 , H01F10/32 , H01L43/12
摘要： A magnetic tunnel junction (MTJ) device includes two magnetic tunnel junction elements and a magnetic shielding layer. The two magnetic tunnel junction elements are arranged side by side. The magnetic shielding layer is disposed between the magnetic tunnel junction elements. A method of forming said magnetic tunnel junction (MTJ) device includes the following steps. An interlayer including a magnetic shielding layer is formed. The interlayer is etched to form recesses in the interlayer. The magnetic tunnel junction elements fill in the recesses. Or, a method of forming said magnetic tunnel junction (MTJ) device includes the following steps. A magnetic tunnel junction layer is formed. The magnetic tunnel junction layer is patterned to form magnetic tunnel junction elements. An interlayer including a magnetic shielding layer is formed between the magnetic tunnel junction elements.
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