Invention Grant
- Patent Title: Method of manufacturing a light emitting element
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Application No.: US16678169Application Date: 2019-11-08
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Publication No.: US10756233B2Publication Date: 2020-08-25
- Inventor: Naoto Inoue , Sho Kusaka
- Applicant: NICHIA CORPORATION
- Applicant Address: JP Anan-shi
- Assignee: NICHIA CORPORATION
- Current Assignee: NICHIA CORPORATION
- Current Assignee Address: JP Anan-shi
- Agency: Foley & Lardner LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@5a87a505 com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@40df7edc
- Main IPC: H01L33/00
- IPC: H01L33/00 ; B23K26/53 ; B23K26/00 ; H01L21/78 ; B23K103/00

Abstract:
A method of manufacturing a light emitting element includes: providing a wafer comprising: a sapphire substrate having a first face and a second face, and a semiconductor structure disposed on the second face; irradiating the substrate with a laser beam to form a plurality of modified regions in the substrate; and subsequently, separating the wafer into a plurality of light emitting elements.
Public/Granted literature
- US20200075794A1 METHOD OF MANUFACTURING A LIGHT EMITTING ELEMENT Public/Granted day:2020-03-05
Information query
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