公开(公告)号：US10756233B2

公开(公告)日：2020-08-25

申请号：US16678169

申请日：2019-11-08

Applicant: NICHIA CORPORATION

Inventor： Naoto Inoue ,  Sho Kusaka

IPC: H01L33/00 ,  B23K26/53 ,  B23K26/00 ,  H01L21/78 ,  B23K103/00

Abstract: A method of manufacturing a light emitting element includes: providing a wafer comprising: a sapphire substrate having a first face and a second face, and a semiconductor structure disposed on the second face; irradiating the substrate with a laser beam to form a plurality of modified regions in the substrate; and subsequently, separating the wafer into a plurality of light emitting elements.

公开(公告)号：US10516075B2

公开(公告)日：2019-12-24

申请号：US16125240

申请日：2018-09-07

Applicant: NICHIA CORPORATION

Inventor： Naoto Inoue ,  Sho Kusaka

IPC: H01L33/00 ,  B23K26/00 ,  H01L21/78 ,  B23K26/53 ,  B23K103/00

Abstract: A method of manufacturing a light emitting element includes: providing a wafer including: a substrate, and a semiconductor structure; irradiating the substrate with a laser beam to form a plurality of modified regions in the substrate; and subsequently, separating the wafer into a plurality of light emitting elements. Irradiating the substrate with a laser beam includes: performing a first irradiation step comprising irradiating the laser beam along a plurality of first lines that extend in a first direction that is parallel to the first face and that are aligned in a second direction that is parallel to the first face and intersects the first direction, and subsequent to performing the first irradiation step, performing a second irradiation step comprising irradiating the laser beam along second lines that extend in the second direction.

公开(公告)号：US10672660B2

公开(公告)日：2020-06-02

申请号：US15902756

申请日：2018-02-22

Applicant: NICHIA CORPORATION

Inventor： Naoto Inoue ,  Sho Kusaka ,  Minoru Yamamoto ,  Masayuki Ibaraki ,  Hiroaki Tamemoto

IPC: H01L21/78 ,  B23K26/57 ,  H01L33/00 ,  B23K26/53 ,  B23K103/00

Abstract: A method of manufacturing a semiconductor element includes: providing a wafer having a semiconductor layered body on a sapphire substrate; irradiating a laser light in an interior region of the sapphire substrate to create cracks in the sapphire substrate by performing a first scan to irradiate the laser light at a first depth with a first pulse energy to create a first modified region, and a second scan following the first scan to irradiate the laser light at a second depth with a second pulse energy greater than the first pulse energy along and within the first modified region; and dividing the wafer by extending the cracks to obtain a semiconductor element.