Invention Grant
- Patent Title: Method and apparatus for gas abatement
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Application No.: US16206276Application Date: 2018-11-30
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Publication No.: US10757797B2Publication Date: 2020-08-25
- Inventor: Rongping Wang , Jibing Zeng , David Muquing Hou , Michael S. Cox , Zheng Yuan , James L'Heureux
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson + Sheridan, LLP
- Main IPC: H05H1/24
- IPC: H05H1/24 ; H01J37/32 ; H05H1/46 ; C23C16/507 ; C23C16/44

Abstract:
Embodiments disclosed herein include a plasma source, an abatement system and a vacuum processing system for abating compounds produced in semiconductor processes. In one embodiment, a plasma source includes a dielectric tube and a coil antenna surrounding the tube. The coil antenna includes a plurality of turns, and at least one turn is shorted. Selectively shorting one or more turns of the coil antenna helps reduce the inductance of the coil antenna, allowing higher power to be supplied to the coil antenna that covers more processing volume. Higher power supplied to the coil antenna and larger processing volume lead to an improved DRE.
Public/Granted literature
- US20190246481A1 METHOD AND APPARATUS FOR GAS ABATEMENT Public/Granted day:2019-08-08
Information query
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