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    Hall effect enhanced capacitively coupled plasma source
    4.
    发明授权
    Hall effect enhanced capacitively coupled plasma source 有权
    霍尔效应增强了电容耦合等离子体源

    公开(公告)号：US09230780B2

    公开(公告)日：2016-01-05

    申请号：US14199974

    申请日：2014-03-06

    Applicant: Applied Materials, Inc.

    Inventor： Michael S. Cox ,  Rongping Wang ,  Brian T. West ,  Roger M. Johnson ,  Colin John Dickinson

    IPC: C23C16/54 ,  H01J37/32 ,  H01J37/16

    CPC classification number: H01J37/3266 ,  H01J37/165 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32596 ,  H01J37/32651 ,  H01J37/32669 ,  H01J37/32844 ,  H01J2237/002 ,  H01J2237/327 ,  H01J2237/332 ,  H01J2237/334 ,  Y02C20/30

    Abstract: Embodiments disclosed herein include a plasma source for abating compounds produced in semiconductor processes. The plasma source has a first plate and a second plate parallel to the first plate. An electrode is disposed between the first and second plates and an outer wall is disposed between the first and second plates surrounding the cylindrical electrode. The plasma source has a first plurality of magnets disposed on the first plate and a second plurality of magnets disposed on the second plate. The magnetic field created by the first and second plurality of magnets is substantially perpendicular to the electric field created between the electrode and the outer wall. In this configuration, a dense plasma is created.

    Abstract translation: 本文公开的实施例包括用于减轻在半导体工艺中产生的化合物的等离子体源。 等离子体源具有平行于第一板的第一板和第二板。 电极设置在第一和第二板之间，外壁设置在围绕圆柱形电极的第一和第二板之间。 等离子体源具有设置在第一板上的第一多个磁体和设置在第二板上的第二多个磁体。 由第一和第二多个磁体产生的磁场基本上垂直于在电极和外壁之间产生的电场。 在该配置中，产生致密等离子体。

    Method and apparatus for fabricating silicon heterojunction solar cells
    5.
    发明授权
    Method and apparatus for fabricating silicon heterojunction solar cells 有权
    制造硅异质结太阳能电池的方法和装置

    公开(公告)号：US08728918B2

    公开(公告)日：2014-05-20

    申请号：US13656420

    申请日：2012-10-19

    Applicant: Applied Materials, Inc.

    Inventor： Shuran Sheng ,  Lin Zhang ,  Zheng Yuan ,  Rongping Wang ,  Alan Tso

    IPC: H01L21/20

    CPC classification number: H01L21/0257 ,  C23C16/24 ,  C23C16/44 ,  C23C16/4585 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32577 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/0262 ,  H01L31/0747 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    Abstract: A method for fabricating a semiconductor layer within a plasma enhanced chemical vapor deposition (PECVD) apparatus. The PECVD apparatus includes a plurality of walls defining a processing region, a substrate support, a shadow frame, a gas distribution showerhead, a gas source in fluid communication with the gas distribution showerhead and the processing region, a radio frequency power source coupled to the gas distribution showerhead, and one or more VHF grounding straps electrically coupled to at least one of the plurality of walls. The VHF grounding straps provide a low-impedance current path between at least one of the plurality of walls and at least one of a shadow frame or the substrate support. The method further includes delivering a semiconductor precursor gas and a dopant precursor gas and delivering a very high frequency (VHF) power to generate a plasma to form a first layer on the one or more substrates.

    Abstract translation: 一种用于在等离子体增强化学气相沉积（PECVD）装置内制造半导体层的方法。 PECVD装置包括限定处理区域的多个壁，基板支撑件，阴影框架，气体分配喷头，与气体分配喷头和处理区域流体连通的气体源，耦合到 气体分配喷头和与多个壁中的至少一个电连接的一个或多个VHF接地带。 VHF接地带在多个壁中的至少一个和阴影框架或衬底支撑件中的至少一个之间提供低阻抗电流路径。 该方法还包括传输半导体前体气体和掺杂剂前体气体并输送非常高频（VHF）的功率以产生等离子体以在一个或多个基底上形成第一层。

    METHOD AND APPARATUS FOR FABRICATING SILICON HETEROJUNCTION SOLAR CELLS
    6.
    发明申请
    METHOD AND APPARATUS FOR FABRICATING SILICON HETEROJUNCTION SOLAR CELLS 有权
    用于制造硅异质太阳能电池的方法和装置

    公开(公告)号：US20130102133A1

    公开(公告)日：2013-04-25

    申请号：US13656420

    申请日：2012-10-19

    Applicant: Applied Materials, Inc.

    Inventor： Shuran Sheng ,  Lin Zhang ,  Zheng Yuan ,  Rongping Wang ,  Alan Tso

    IPC: H01L21/02

    CPC classification number: H01L21/0257 ,  C23C16/24 ,  C23C16/44 ,  C23C16/4585 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32577 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/0262 ,  H01L31/0747 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    Abstract: A method for fabricating a semiconductor layer within a plasma enhanced chemical vapor deposition (PECVD) apparatus. The PECVD apparatus includes a plurality of walls defining a processing region, a substrate support, a shadow frame, a gas distribution showerhead, a gas source in fluid communication with the gas distribution showerhead and the processing region, a radio frequency power source coupled to the gas distribution showerhead, and one or more VHF grounding straps electrically coupled to at least one of the plurality of walls. The VHF grounding straps provide a low-impedance current path between at least one of the plurality of walls and at least one of a shadow frame or the substrate support. The method further includes delivering a semiconductor precursor gas and a dopant precursor gas and delivering a very high frequency (VHF) power to generate a plasma to form a first layer on the one or more substrates.

    Abstract translation: 一种用于在等离子体增强化学气相沉积（PECVD）装置内制造半导体层的方法。 PECVD装置包括限定处理区域的多个壁，基板支撑件，阴影框架，气体分配喷头，与气体分配喷头和处理区域流体连通的气体源，耦合到 气体分配喷头和与多个壁中的至少一个电连接的一个或多个VHF接地带。 VHF接地带在多个壁中的至少一个和阴影框架或衬底支撑件中的至少一个之间提供低阻抗电流路径。 该方法还包括传输半导体前体气体和掺杂剂前体气体并输送非常高频（VHF）的功率以产生等离子体以在一个或多个基底上形成第一层。

    Arcing detection apparatus for plasma processing
    7.
    发明授权
    Arcing detection apparatus for plasma processing 有权

    公开(公告)号：US10580626B2

    公开(公告)日：2020-03-03

    申请号：US15348579

    申请日：2016-11-10

    Applicant: Applied Materials, Inc.

    Inventor： Lin Zhang ,  Rongping Wang ,  Jian J. Chen ,  Michael S. Cox ,  Andrew V. Le

    IPC: G01R31/00 ,  G01R31/14 ,  G06F19/00 ,  G08B21/00 ,  G01N27/00 ,  H01J37/32

    Abstract: Embodiments described herein generally relate to a plasma processing chamber and a detection apparatus for arcing events. In one embodiment, an arcing detection apparatus is disclosed herein. The arcing detection apparatus comprises a probe, a detection circuit, and a data log system. The probe positioned partially exposed to an interior volume of a plasma processing chamber. The detection circuit is configured to receive an analog signal from the probe and output an output signal scaling events present in the analog signal. The data log system is communicatively coupled to receive the output signal from the detection circuit. The data log system is configured to track arcing events occurring in the interior volume.

    Plasma ignition circuit
    8.
    发明授权
    Plasma ignition circuit 有权

    公开(公告)号：US11328900B2

    公开(公告)日：2022-05-10

    申请号：US16792562

    申请日：2020-02-17

    Applicant: Applied Materials, Inc.

    Inventor： Teryl Pratt ,  Rongping Wang ,  Guomin Mao ,  Andy Chuang

    IPC: H01J37/32 ,  H05H1/36

    Abstract: A plasma ignition circuit includes a transformer having a primary coil configured to couple an RF power supply. A first secondary coil is configured to couple a remote plasma source (RPS), and a second secondary coil. The plasma ignition circuit further includes a control switch having an input configured to couple the second secondary coil and an output configured to capacitively couple the RPS and a switch controller. The switch controller is configured to upon sensing a secondary RF voltage applied to the second secondary coil in response to an RF voltage applied by RF power supply to the primary coil, enable the control switch to capacitively apply the secondary RF voltage to the RPS to ignite a plasma within the RPS. Upon sensing a drop in plasma impedance when the plasma is ignited, disable the control switch to discontinue applying the secondary RF voltage to the RPS.

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