公开(公告)号：US10757797B2

公开(公告)日：2020-08-25

申请号：US16206276

申请日：2018-11-30

Applicant: Applied Materials, Inc.

Inventor： Rongping Wang ,  Jibing Zeng ,  David Muquing Hou ,  Michael S. Cox ,  Zheng Yuan ,  James L'Heureux

IPC: H05H1/24 ,  H01J37/32 ,  H05H1/46 ,  C23C16/507 ,  C23C16/44

Abstract: Embodiments disclosed herein include a plasma source, an abatement system and a vacuum processing system for abating compounds produced in semiconductor processes. In one embodiment, a plasma source includes a dielectric tube and a coil antenna surrounding the tube. The coil antenna includes a plurality of turns, and at least one turn is shorted. Selectively shorting one or more turns of the coil antenna helps reduce the inductance of the coil antenna, allowing higher power to be supplied to the coil antenna that covers more processing volume. Higher power supplied to the coil antenna and larger processing volume lead to an improved DRE.

公开(公告)号：US10861681B2

公开(公告)日：2020-12-08

申请号：US15961482

申请日：2018-04-24

Applicant: Applied Materials, Inc.

Inventor： James L'Heureux ,  Ryan T. Downey ,  David Muquing Hou ,  Yan Rozenzon

IPC: H01J37/32 ,  B01D53/32 ,  H01L21/67

Abstract: Embodiments disclosed herein include an abatement system for abating compounds produced in semiconductor processes. The abatement system includes an exhaust cooling apparatus located downstream of a plasma source. The exhaust cooling apparatus includes a plate and a cooling plate disposed downstream of the plate. During operation, materials collected on the plate react with cleaning radicals to form a gas. The temperature of the plate is higher than the temperature of the cooling plate in order to improve the reaction rate of the reaction of the cleaning radicals and the materials on the plate.

公开(公告)号：US10187966B2

公开(公告)日：2019-01-22

申请号：US15147974

申请日：2016-05-06

Applicant: Applied Materials, Inc.

Inventor： Rongping Wang ,  Jibing Zeng ,  David Muquing Hou ,  Michael S. Cox ,  Zheng Yuan ,  James L'Heureux

IPC: H05H1/46 ,  H05H1/24 ,  H01J37/32

Abstract: Embodiments disclosed herein include a plasma source, an abatement system and a vacuum processing system for abating compounds produced in semiconductor processes. In one embodiment, a plasma source includes a dielectric tube and a coil antenna surrounding the tube. The coil antenna includes a plurality of turns, and at least one turn is shorted. Selectively shorting one or more turns of the coil antenna helps reduce the inductance of the coil antenna, allowing higher power to be supplied to the coil antenna that covers more processing volume. Higher power supplied to the coil antenna and larger processing volume lead to an improved DRE.