- 专利标题： Interconnect structure of semiconductor device
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申请号： US16423504申请日： 2019-05-28
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公开(公告)号： US10763162B2公开(公告)日： 2020-09-01
- 发明人: Chia-Ching Tsai , Yi-Wei Chiu , Li-Te Hsu
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L21/768
- IPC分类号： H01L21/768
摘要：
A device includes a substrate, a first dielectric layer over the substrate, a first conductive feature in the first dielectric layer, and an etch stop layer over the first dielectric layer. The etch stop layer includes metal-doped aluminum nitride. The device further includes a second dielectric layer over the etch stop layer, and a second conductive feature in the second dielectric layer. The second conductive feature extends into the etch stop layer and contacts the first conductive feature.
公开/授权文献
- US20190279898A1 INTERCONNECT STRUCTURE OF SEMICONDUCTOR DEVICE 公开/授权日：2019-09-12
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