Invention Grant
- Patent Title: Integrated circuit having a hidden shared contact
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Application No.: US16037595Application Date: 2018-07-17
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Publication No.: US10763213B2Publication Date: 2020-09-01
- Inventor: Julien Delalleau , Christian Rivero
- Applicant: STMicroelectronics (Rousset) SAS
- Applicant Address: FR Rousset
- Assignee: STMicroelectronics (Rousset) SAS
- Current Assignee: STMicroelectronics (Rousset) SAS
- Current Assignee Address: FR Rousset
- Agency: Crowe & Dunlevy
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@400ea9e2
- Main IPC: H01L23/535
- IPC: H01L23/535 ; H01L29/78 ; H01L21/768 ; H01L21/28 ; H01L23/528 ; H01L23/485 ; H01L21/8234 ; H01L29/417 ; H01L29/66 ; H01L29/423 ; H01L27/11 ; H01L29/49

Abstract:
An integrated circuit includes a substrate and an interconnect. A substrate zone is delineated by an insulating zone. A polysilicon region extends on the insulating zone and includes a strip part. An isolating region is situated between the substrate and the interconnect and covers the substrate zone and the polysilicon region. A first electrically conductive pad passes through the isolating region and has a first end in electrical contact with both the strip part and the substrate zone. A second end of the electrically conductive pad is in electrical contact with the interconnect. A second electrically conductive pad also passes through the isolating region to make electrical contact with another region. The first and second electrically conductive pads have equal or substantially equal cross sectional sizes, within a tolerance.
Public/Granted literature
- US20190027439A1 INTEGRATED CIRCUIT HAVING A HIDDEN SHARED CONTACT Public/Granted day:2019-01-24
Information query
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