Invention Grant
- Patent Title: Semiconductor device and method of manufacturing a semiconductor device
-
Application No.: US16216954Application Date: 2018-12-11
-
Publication No.: US10763260B2Publication Date: 2020-09-01
- Inventor: Chien-Ting Ho , Shih-Fang Tzou , Chun-Yuan Wu , Li-Wei Feng , Yu-Chieh Lin , Ying-Chiao Wang , Tsung-Ying Tsai
- Applicant: UNITED MICROELECTRONICS CORP. , Fujian Jinhua Integrated Circuit Co., Ltd.
- Applicant Address: TW Hsin-Chu CN Quanzhou, Fujian Province
- Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee Address: TW Hsin-Chu CN Quanzhou, Fujian Province
- Agent Winston Hsu
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@32fd45c9
- Main IPC: H01L27/105
- IPC: H01L27/105 ; H01L21/768 ; H01L21/02 ; H01L29/66 ; H01L21/311 ; H01L27/108 ; H01L29/78 ; H01L21/3105
Abstract:
A semiconductor device includes a memory region, a plurality of bit lines in the memory region, a first low-k dielectric layer on each sidewall of each bit line, a plurality of storage node regions between the bit lines, and a second low-k dielectric layer surrounding each storage node region.
Public/Granted literature
- US20190115352A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE Public/Granted day:2019-04-18
Information query
IPC分类:
