Invention Grant
- Patent Title: Three-dimensional memory device containing aluminum-silicon word lines and methods of manufacturing the same
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Application No.: US16019961Application Date: 2018-06-27
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Publication No.: US10763271B2Publication Date: 2020-09-01
- Inventor: Peter Rabkin , Masaaki Higashitani , Jayavel Pachamuthu
- Applicant: SANDISK TECHNOLOGIES LLC
- Applicant Address: US TX Addison
- Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee Address: US TX Addison
- Agency: The Marbury Law Group PLLC
- Main IPC: H01L27/11
- IPC: H01L27/11 ; H01L27/11529 ; H01L27/11556 ; H01L27/11582 ; H01L27/11573 ; H01L27/1157 ; H01L27/11519 ; H01L27/11565 ; H01L27/11524

Abstract:
A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, and memory stack structures extending through the alternating stack. Each of the memory stack structures comprises a memory film and a vertical semiconductor channel contacting an inner sidewall of the memory film. The electrically conductive layers include aluminum and silicon and provide low resistance electrically conductive paths as word lines of the three-dimensional memory device. The aluminum-based electrically conductive layers can provide low resistivity, low mechanical stress, and thermal stability for use as high performance word lines.
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