Invention Grant
- Patent Title: Semiconductor device including ion implanted alignment marks and method of manufacturing the same
-
Application No.: US16140776Application Date: 2018-09-25
-
Publication No.: US10763331B2Publication Date: 2020-09-01
- Inventor: Kouichi Saitou
- Applicant: Panasonic Intellectual Property Management Co., Ltd.
- Applicant Address: JP Osaka
- Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Current Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@620a3611
- Main IPC: H01L29/16
- IPC: H01L29/16 ; H01L23/544 ; H01L21/033 ; H01L29/78 ; H01L21/04 ; H01L21/308 ; H01L29/66
Abstract:
A semiconductor device includes a bulk substrate, and an epitaxial layer formed on a surface of the bulk substrate. A part of the surface of the bulk substrate is an alignment region including an alignment pattern defined by at least one recess or one protrusion. An ion-injected layer is formed in at least a part of the alignment region.
Public/Granted literature
- US20190103463A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2019-04-04
Information query
IPC分类:
