Invention Grant
- Patent Title: Semiconductor devices having equal thickness gate spacers
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Application No.: US16216356Application Date: 2018-12-11
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Publication No.: US10763342B2Publication Date: 2020-09-01
- Inventor: Cheng Chi , Ruilong Xie
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION , GLOBALFOUNDRIES Inc.
- Applicant Address: US NY Armonk KY Grand Cayman
- Assignee: Interanational Business Machines Corporation,GLOBALFOUNDRIES Inc.
- Current Assignee: Interanational Business Machines Corporation,GLOBALFOUNDRIES Inc.
- Current Assignee Address: US NY Armonk KY Grand Cayman
- Agency: Tutunjian & Bitetto, P.C.
- Agent Jennifer R. Davis
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L27/092 ; H01L29/06 ; H01L21/8238 ; H01L21/285 ; H01L21/3105 ; H01L21/768 ; H01L21/8234
Abstract:
A method is presented for forming equal thickness gate spacers for a CMOS (complementary metal oxide semiconductor) device, the method includes forming a PFET (p-type field effect transistor) device and an NFET (n-type field effect transistor) device each including gate masks formed over dummy gates, forming PFET epi growth regions between the dummy gates of the PFET device, forming NFET epi growth regions between the dummy gates of the NFET device, depositing a nitride liner and an oxide over the PFET and NFET epi growth regions, the nitride liner and oxide extending up to the gate masks, and removing the dummy gates and the gate masks to form HKMGs (high-k metal gates) between the PFET and NFET epi growth regions.
Public/Granted literature
- US20190123167A1 SEMICONDUCTOR DEVICES HAVING EQUAL THICKNESS GATE SPACERS Public/Granted day:2019-04-25
Information query
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