Invention Grant
- Patent Title: Integrated circuit device including through-silicon via structure and method of manufacturing the same
-
Application No.: US16131182Application Date: 2018-09-14
-
Publication No.: US10777487B2Publication Date: 2020-09-15
- Inventor: Ju-il Choi , Kun-sang Park , Son-kwan Hwang , Ji-soon Park , Byung-lyul Park
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@677232ce
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/31 ; H01L21/768 ; H01L23/532 ; H01L25/065

Abstract:
An integrated circuit (IC) device includes a semiconductor substrate having a via hole extending through at least a part thereof, a conductive structure in the via hole, a conductive barrier layer adjacent the conductive structure; and a via insulating layer interposed between the semiconductor substrate and the conductive barrier layer. The conductive barrier layer may include an outer portion oxidized between the conductive barrier layer and the via insulating layer, and the oxidized outer portion of the conductive barrier layer may substantially surrounds the remaining portion of the conductive barrier layer.
Public/Granted literature
- US20190013260A1 INTEGRATED CIRCUIT DEVICE INCLUDING THROUGH-SILICON VIA STRUCTURE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2019-01-10
Information query
IPC分类: