Invention Grant
- Patent Title: Semiconductor device including conductive spacer with small linear coefficient
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Application No.: US16146340Application Date: 2018-09-28
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Publication No.: US10777488B2Publication Date: 2020-09-15
- Inventor: Shingo Tsuchimochi
- Applicant: DENSO CORPORATION
- Applicant Address: JP Kariya-shi
- Assignee: DENSO CORPORATION
- Current Assignee: DENSO CORPORATION
- Current Assignee Address: JP Kariya-shi
- Agency: Hunton Andrews Kurth LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@616f779c
- Main IPC: H01L23/051
- IPC: H01L23/051 ; H01L23/31 ; H01L23/492 ; H01L23/00 ; H01L25/07

Abstract:
A semiconductor device is provided with a first insulated substrate including an insulator layer and a metal layer disposed on each of two faces of the insulator layer, a first semiconductor element disposed on the metal layer on one face of the first insulated substrate, a second insulated substrate including an insulator layer and a metal layer disposed on each of two faces of the insulator layer, a second semiconductor element disposed on one of the metal layers of the second insulated substrate, and an encapsulant encapsulating the first semiconductor element and the second semiconductor element. The metal layer on the other face of the first insulated substrate and the metal layer on the other face of the second insulated substrate are exposed on a first flat surface of the encapsulant.
Public/Granted literature
- US20190103340A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-04-04
Information query
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