- 专利标题： Electrochemical removal of aluminum nitride substrates for electronic and optoelectronic devices
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申请号： US16161320申请日： 2018-10-16
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公开(公告)号： US10777706B2公开(公告)日： 2020-09-15
- 发明人: Ken Kitamura , Jianfeng Chen , Leo J. Schowalter
- 申请人： Ken Kitamura , Jianfeng Chen , Leo J. Schowalter
- 申请人地址： US NY Green Island
- 专利权人： CRYSTAL IS, INC.
- 当前专利权人： CRYSTAL IS, INC.
- 当前专利权人地址： US NY Green Island
- 代理机构： Morgan, Lewis & Bockius LLP
- 主分类号： H01L33/32
- IPC分类号： H01L33/32 ; H01L33/58 ; H01L33/22 ; H01L33/40 ; H01L33/00 ; H01L33/06 ; H01L33/20
摘要：
In various embodiments, an electrochemical process is utilized to remove at least a portion of a substrate from multiple singulated or unsingulated electronic-device or optoelectronic-device dies. The dies may be attached to a submount for the removal process, and the dies may be immersed in or non-immersively contact an electrolyte during the removal process.
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