Invention Grant
- Patent Title: Electronic device comprising a die comprising a high electron mobility transistor
-
Application No.: US16664758Application Date: 2019-10-25
-
Publication No.: US10784140B2Publication Date: 2020-09-22
- Inventor: Ali Salih , Gordon M. Grivna
- Applicant: Semiconductor Components Industries, LLC
- Applicant Address: US AZ Phoenix
- Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee Address: US AZ Phoenix
- Agency: Abel Schillinger, LLP
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L21/683 ; H01L27/06 ; H01L29/78 ; H01L27/085 ; H01L21/8258 ; H01L21/304 ; H01L21/306 ; H01L21/56 ; H01L23/31 ; H01L23/00 ; H01L29/40 ; H01L29/417 ; H01L29/16 ; H01L29/20
Abstract:
An electronic device can include a semiconductor material and a semiconductor layer overlying the semiconductor material, wherein the semiconductor layer has a greater bandgap energy as compared to the semiconductor material. The electronic device can include a component having a high electrical field region and a low electrical field region. Within the high electrical field region, the semiconductor material is not present. In another embodiment, the component may not be present. In another aspect, a process can include providing a substrate and a semiconductor layer overlying the substrate; removing a first portion of the substrate to define a first trench; forming a first insulating layer within the first trench; removing a second portion of the substrate adjacent to first insulating layer to define second trench; and forming a second insulating layer within the second trench.
Public/Granted literature
- US20200066568A1 Electronic Device Comprising a Die Comprising a High Electron Mobility Transistor Public/Granted day:2020-02-27
Information query
IPC分类:
