Invention Grant
- Patent Title: Method of processing solder bump by vacuum annealing
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Application No.: US13312395Application Date: 2011-12-06
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Publication No.: US10784221B2Publication Date: 2020-09-22
- Inventor: Hsiu-Jen Lin , Chung-Shi Liu , Ming-Da Cheng , Chung-Cheng Lin , Yu-Peng Tsai , Cheng-Ting Chen
- Applicant: Hsiu-Jen Lin , Chung-Shi Liu , Ming-Da Cheng , Chung-Cheng Lin , Yu-Peng Tsai , Cheng-Ting Chen
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: H01L21/58
- IPC: H01L21/58 ; H01L23/00 ; H05K3/34 ; H05K3/28 ; H01L21/48
Abstract:
A method includes vacuum annealing on a substrate having at least one solder bump to reduce voids at an interface of the at least one solder bump. A die is mounted over the substrate.
Public/Granted literature
- US20130143364A1 METHOD OF PROCESSING SOLDER BUMP BY VACUUM ANNEALING Public/Granted day:2013-06-06
Information query
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