This specification discloses methods for integrating a SiGe-based HBT (heterojunction bipolar transistor) and a Si-based BJT (bipolar junction transistor) together in a single manufacturing process that does not add a lot of process complexity, and an integrated circuit that can be fabricated utilizing such a streamlined manufacturing process. In some embodiments, such an integrated circuit can enjoy both the benefits of a higher RF (radio frequency) performance for the SiGe HBT and a lower leakage current for the Si-based BJT. In some embodiments, such an integrated circuit can be applied to an ESD (electrostatic discharge) clamp circuit, in order to achieve a lower, or no, yield-loss.