公开(公告)号：US20200075585A1

公开(公告)日：2020-03-05

申请号：US16120098

申请日：2018-08-31

Applicant: NXP B.V.

Inventor： Petrus Hubertus Cornelis Magnee ,  Pieter Simon van Dijk ,  Johannes Josephus Theodorus Marinus Donkers ,  Dolphin Abessolo Bidzo

IPC: H01L27/082 ,  H01L21/8222 ,  H01L21/8249 ,  H01L21/02 ,  H01L21/306 ,  H01L21/266 ,  H01L21/225 ,  H01L21/324 ,  H01L27/02 ,  H01L27/06 ,  H01L29/04 ,  H01L29/165 ,  H01L29/66 ,  H01L29/732 ,  H01L29/737

Abstract: This specification discloses methods for integrating a SiGe-based HBT (heterojunction bipolar transistor) and a Si-based BJT (bipolar junction transistor) together in a single manufacturing process that does not add a lot of process complexity, and an integrated circuit that can be fabricated utilizing such a streamlined manufacturing process. In some embodiments, such an integrated circuit can enjoy both the benefits of a higher RF (radio frequency) performance for the SiGe HBT and a lower leakage current for the Si-based BJT. In some embodiments, such an integrated circuit can be applied to an ESD (electrostatic discharge) clamp circuit, in order to achieve a lower, or no, yield-loss.

公开(公告)号：US10784257B2

公开(公告)日：2020-09-22

申请号：US16120098

申请日：2018-08-31

Applicant: NXP B.V.

Inventor： Petrus Hubertus Cornelis Magnee ,  Pieter Simon van Dijk ,  Johannes Josephus Theodorus Marinus Donkers ,  Dolphin Abessolo Bidzo

IPC: H01L27/082 ,  H01L21/02 ,  H01L21/225 ,  H01L21/266 ,  H01L21/306 ,  H01L21/324 ,  H01L21/8222 ,  H01L21/8249 ,  H01L27/02 ,  H01L27/06 ,  H01L29/04 ,  H01L29/165 ,  H01L29/66 ,  H01L29/732 ,  H01L29/737

Abstract: This specification discloses methods for integrating a SiGe-based HBT (heterojunction bipolar transistor) and a Si-based BJT (bipolar junction transistor) together in a single manufacturing process that does not add a lot of process complexity, and an integrated circuit that can be fabricated utilizing such a streamlined manufacturing process. In some embodiments, such an integrated circuit can enjoy both the benefits of a higher RF (radio frequency) performance for the SiGe HBT and a lower leakage current for the Si-based BJT. In some embodiments, such an integrated circuit can be applied to an ESD (electrostatic discharge) clamp circuit, in order to achieve a lower, or no, yield-loss.