Invention Grant
- Patent Title: Integrated circuit structure with semiconductor devices and method of fabricating the same
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Application No.: US16697800Application Date: 2019-11-27
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Publication No.: US10784261B2Publication Date: 2020-09-22
- Inventor: Wei-Lun Hsu , Yung-Chien Kung , Ming-Tsung Yeh , Yan-Hsiu Liu , Am-Tay Luy , Yao-Pi Hsu , Ji-Fu Kung
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsinchu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, PC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@78afb7b2
- Main IPC: H01L27/14
- IPC: H01L27/14 ; H01L27/146 ; H01L27/092 ; H01L21/762 ; H01L21/8238 ; H01L21/761 ; H01L21/8234 ; H01L29/78
Abstract:
An integrated circuit (IC) structure includes a substrate having several regions, several semiconductor devices formed at the substrate and respectively within the regions, and an ultra-deep (UD) trench isolation structure formed in the substrate. The substrate has a top surface and a bottom surface oppositely, and the UD trench isolation structure formed in the substrate surrounds peripheries of each of the regions for structurally and physically isolating the semiconductor devices within different regions. The UD trench isolation structure penetrates the substrate by extending from the top surface of the substrate to the bottom surface of the substrate.
Public/Granted literature
- US20200098755A1 INTEGRATED CIRCUIT STRUCTURE WITH SEMICONDUCTOR DEVICES AND METHOD OF FABRICATING THE SAME Public/Granted day:2020-03-26
Information query
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