Invention Grant
- Patent Title: Nanowire field effect transistor detection device and the detection method thereof
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Application No.: US15856325Application Date: 2017-12-28
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Publication No.: US10784343B2Publication Date: 2020-09-22
- Inventor: Chii Dong Chen , Li Chu Tsai , Chia Jung Chu , Ying Pin Wu
- Applicant: ACADEMIA SINICA
- Applicant Address: TW Taipei
- Assignee: ACADEMIA SINICA
- Current Assignee: ACADEMIA SINICA
- Current Assignee Address: TW Taipei
- Agency: Bacon & Thomas, PLLC
- Main IPC: H01L29/06
- IPC: H01L29/06 ; C12Q1/6825 ; C12Q1/6874 ; G01N27/414 ; B82Y40/00 ; H01L29/78 ; G01N27/48

Abstract:
The present invention discloses a Nanowire Field Effect Transistor Detection Device and the Detection Method thereof. The Nanowire Field Effect Transistor Detection Device of the present invention comprises: gate oxide, SiNW chip, surface oxide, and surface molecule layer. The circuit structure of the Nanowire Field Effect Transistor Detection Device comprises a first resistor, a second resistor, a first capacitor, a second capacitor, a third capacitor, a fourth capacitor, an AC voltage source, and an ammeter. In addition, the present invention provides a method for attaching the probe Ni-NTA to the Nanowire Field Effect Transistor Detection Device. Furthermore, the present invention provides a method for attaching the isooctyl trimethoxysilane molecule to the Nanowire Field Effect Transistor Detection Device.
Public/Granted literature
- US20190206990A1 Nanowire Field Effect Transistor Detection Device and the Detection Method thereof Public/Granted day:2019-07-04
Information query
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