Invention Grant
- Patent Title: Bulk acoustic wave resonator
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Application No.: US15814869Application Date: 2017-11-16
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Publication No.: US10784837B2Publication Date: 2020-09-22
- Inventor: Tae Hun Lee , Chang Hyun Lim , Tae Yoon Kim , Moon Chul Lee
- Applicant: Samsung Electro-Mechanics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: NSIP Law
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@1e9fbc9c
- Main IPC: H03H9/12
- IPC: H03H9/12 ; H03H9/125 ; H03H9/17 ; H03H9/13 ; H03H9/205

Abstract:
A bulk acoustic wave resonator includes a substrate including a first via and a second via, a lower electrode connection member, a lower electrode, a piezoelectric layer, an upper electrode, and an upper electrode connection member spaced apart from the lower electrode connection member. The lower electrode, the piezoelectric layer, and the upper electrode constitute a resonant portion. The lower electrode connection member electrically connects the lower electrode to the first via and supports a first edge portion of the resonant portion. The upper electrode connection member electrically connects the upper electrode to the second via and supports a second edge portion of the resonant portion. Either one or both of the upper electrode connection member and the lower electrode connection member includes a respective extension portion connected to a respective one of the first via and the second via that is disposed below the resonant portion.
Public/Granted literature
- US20180337656A1 BULK ACOUSTIC WAVE RESONATOR Public/Granted day:2018-11-22
Information query
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