Bulk-acoustic wave resonator
    2.
    发明授权

    公开(公告)号:US10892737B2

    公开(公告)日:2021-01-12

    申请号:US16388979

    申请日:2019-04-19

    Abstract: A bulk-acoustic wave resonator includes a substrate; a membrane layer forming a cavity with the substrate; a first electrode at least partially disposed on an upper portion of the cavity including an end portion that is thicker than other portions of the first electrode; an insertion layer including a first portion disposed adjacent to from the end portion of the first electrode and a second portion disposed on an upper portion of the first electrode; a piezoelectric layer disposed to cover the insertion layer; and a second electrode disposed on an upper portion of the piezoelectric layer.

    Angular velocity sensor
    6.
    发明授权

    公开(公告)号:US09879998B2

    公开(公告)日:2018-01-30

    申请号:US15010770

    申请日:2016-01-29

    CPC classification number: G01C19/5712

    Abstract: An angular velocity sensor includes a mass body; a first frame provided outside of the mass body; a first flexible part connecting the mass body and the first frame to each other; a second flexible part connecting the mass body and the first frame to each other; a second frame provided outside of the first frame; a third flexible part connecting the first frame and the second frame to each other; and a fourth flexible part connecting the first frame and the second frame to each other, wherein the mass body is fixed to the first frame by the second flexible part so as to be rotation-displaceable and translation-displaceable, and the first frame is connected to the second frame by the fourth flexible part so as to be rotation-displaceable.

    Bulk-acoustic wave resonator
    9.
    发明授权

    公开(公告)号:US11057017B2

    公开(公告)日:2021-07-06

    申请号:US15996921

    申请日:2018-06-04

    Abstract: A bulk-acoustic wave resonator includes a substrate; a lower electrode formed on the substrate, and at least a portion of the lower electrode is formed on a cavity; a piezoelectric layer formed on the lower electrode; an upper electrode formed on the piezoelectric layer; a membrane layer formed below the lower electrode and forming the cavity together with the substrate; and a protruding portion formed on the membrane layer and further formed in the cavity in a direction that extends away from the membrane layer.

    Bulk acoustic wave resonator
    10.
    发明授权

    公开(公告)号:US10958239B2

    公开(公告)日:2021-03-23

    申请号:US15797224

    申请日:2017-10-30

    Abstract: A bulk acoustic wave resonator includes: support members disposed between air cavities; a resonant part including a first electrode, a piezoelectric layer, and a second electrode sequentially disposed above the air cavities and on the support members; and a wiring electrode connected either one or both of the first electrode and the second electrode, and disposed above one of the air cavities, wherein a width of an upper surface of the support members is greater than a width of a lower surface of the support members, and side surfaces of the support members connecting the upper surface and the lower surface to each other are inclined.

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