公开(公告)号：US10756700B2

公开(公告)日：2020-08-25

申请号：US15638809

申请日：2017-06-30

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Sung Han ,  Jae Chang Lee ,  Won Han ,  Tae Yoon Kim ,  Jong Woon Kim ,  Tae Kyung Lee ,  Moon Chul Lee ,  Tae Hun Lee ,  Sung Min Cho ,  In Young Kang

IPC: H01L41/09 ,  H03H9/10 ,  H03H9/02 ,  H03H9/54 ,  H03H9/17

Abstract: A bulk acoustic wave resonator device includes: a substrate; a lower electrode disposed on the substrate; a piezoelectric layer disposed over a portion of the lower electrode; an upper electrode disposed on the piezoelectric layer; and a shape control layer covering an edge of a cavity disposed between the substrate and the lower electrode, wherein tensile stress is applied to the shape control layer during formation of the shape control layer.

公开(公告)号：US11323093B2

公开(公告)日：2022-05-03

申请号：US16875019

申请日：2020-05-15

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Hun Lee ,  Chang Hyun Lim ,  Sang Kee Yoon

IPC: H03H9/17 ,  H03H9/05 ,  H03H9/02 ,  H03H3/02 ,  H03H9/13

Abstract: A bulk-acoustic wave resonator includes: a resonator comprising a central portion in which a first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on a substrate, and an extension portion disposed along a periphery of the central portion; and an insertion layer disposed below the piezoelectric layer in the extension portion to raise the piezoelectric layer. The insertion layer may have a first inclined surface formed along a side surface facing the central portion, and the first electrode may have a second inclined surface extending from a lower end of the first inclined surface of the insertion layer.

公开(公告)号：US10396751B2

公开(公告)日：2019-08-27

申请号：US15384385

申请日：2016-12-20

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Won Han ,  Tae Hun Lee ,  Dae Hun Jeong ,  Moon Chul Lee ,  Sang Uk Son

IPC: H03H9/02 ,  H03H9/17 ,  H03H9/54

Abstract: An acoustic wave filter device includes a lower electrode disposed between a substrate and a piezoelectric layer, an upper electrode disposed on the piezoelectric layer, and an insulating layer disposed on the upper electrode. The insulating layer exposes portions of the upper electrode.

公开(公告)号：US09857258B2

公开(公告)日：2018-01-02

申请号：US14933043

申请日：2015-11-05

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Hun Lee ,  Chang Hyun Lim ,  June Kyoo Lee ,  Dae Hun Jeong

IPC: G01L9/06 ,  G01L9/00 ,  G01L19/06

CPC classification number: G01L9/0054 ,  G01L19/0618

Abstract: A pressure sensor includes a sensor, an elastic support portion, a membrane, and a pressure detector. The sensor is accommodated in a frame of a base substrate. The elastic support portion is elastically connecting the sensor to the frame. The membrane is disposed on a surface of the sensor. The pressure detector is disposed on the membrane and configured to detect a variation in pressure based on a movement of the membrane.

公开(公告)号：US11424729B2

公开(公告)日：2022-08-23

申请号：US16356164

申请日：2019-03-18

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Hun Lee ,  Tae Yoon Kim ,  Moon Chul Lee ,  Chang Hyun Lim ,  Nam Jung Lee ,  Il Han Lee

IPC: H03H9/02 ,  H03H9/17 ,  H03H3/02

Abstract: A bulk-acoustic wave resonator includes a substrate, a first layer, a second layer, a membrane layer, and a resonance portion. The substrate includes a substrate protection layer. The first layer is disposed on the substrate protection layer. The second layer is disposed outside of the first layer. The membrane layer forms a cavity with the substrate protection layer and the first layer. The resonance portion is disposed on the membrane layer. Either one or both of the substrate protection layer and the membrane layer includes a protrusion disposed in the cavity.

公开(公告)号：US10958237B2

公开(公告)日：2021-03-23

申请号：US16395287

申请日：2019-04-26

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Yoon Kim ,  Chang Hyun Lim ,  Sang Kee Yoon ,  Tae Kyung Lee ,  Moon Chul Lee ,  Tae Hun Lee

IPC: H03H9/02 ,  H03H9/17 ,  H03H9/13 ,  H03H9/54 ,  H03H3/02

Abstract: A bulk-acoustic wave resonator includes a substrate, a cavity formed in the substrate, a first electrode, a piezoelectric layer, and a second electrode stacked in order on the substrate, a resonator defined by the first electrode, the piezoelectric layer, and the second electrode overlapping in a vertical direction in an upper portion of the cavity, an additional layer disposed on one surface of the first electrode arranged in a wiring region on an external side of the resonator, and a wiring electrode connected to the first electrode arranged in the wiring region. The first electrode forms a contact interfacial surface with the additional layer and the wiring electrode.

公开(公告)号：US10734968B2

公开(公告)日：2020-08-04

申请号：US15647660

申请日：2017-07-12

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Kyung Lee ,  Tae Yoon Kim ,  Dae Ho Kim ,  Chang Hyun Lim ,  Tae Hun Lee ,  Sang Kee Yoon ,  Jong Woon Kim ,  Won Han ,  Moon Chul Lee

IPC: H03H9/02 ,  H03H9/56 ,  H03H3/02 ,  H03H9/17 ,  H03H9/60 ,  H01L41/047 ,  H03H9/54

Abstract: A bulk acoustic resonator includes: a substrate including an upper surface on which a substrate protection layer is disposed; and a membrane layer forming a cavity together with the substrate, wherein a thickness deviation of either one or both of the substrate protection layer and the membrane layer is 170 Å or less.

公开(公告)号：US10554191B2

公开(公告)日：2020-02-04

申请号：US15623875

申请日：2017-06-15

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Chang Hyun Lim ,  Han Tae Kim ,  Tae Hun Lee ,  Tae Kyung Lee ,  Tae Yoon Kim

IPC: H03H9/15 ,  H01L41/09 ,  H01L41/053 ,  H01L41/047 ,  H03H9/10 ,  H03H9/64 ,  H03H9/00 ,  H01L41/277 ,  H03H9/17 ,  H03H3/02 ,  H01L41/23 ,  H01L41/25 ,  H03H9/02

Abstract: A bulk acoustic wave filter device and method thereof includes a first layer forming an air gap together with a substrate, a lower electrode disposed over the first layer, a piezoelectric layer disposed to cover a portion of the lower electrode, an upper electrode disposed over the piezoelectric layer, a frame layer disposed below the upper electrode, and a lower electrode reinforcing layer disposed on the lower electrode, other than portions in which the piezoelectric layer is disposed. The lower electrode reinforcing layer is formed by separating the lower electrode reinforcing layer from the upper electrode or the frame layer upon one of the upper electrode and the frame layer being formed.

公开(公告)号：US11476833B2

公开(公告)日：2022-10-18

申请号：US16435621

申请日：2019-06-10

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Tae Yoon Kim ,  Tae Kyung Lee ,  Sang Kee Yoon ,  Sung Jun Lee ,  Chang Hyun Lim ,  Nam Jung Lee ,  Tae Hun Lee ,  Moon Chul Lee

IPC: H03H9/17 ,  H03H9/02 ,  H03H9/13

Abstract: An acoustic resonator includes a substrate, an insulation layer disposed on the substrate, a resonating portion disposed on the insulation layer and having a first electrode, a piezoelectric layer, and a second electrode, stacked thereon, a cavity disposed between the insulation layer and the resonating portion, a protruded portion having a plurality of protrusions disposed on a lower surface of the cavity, and a hydrophobic layer disposed on an upper surface of the cavity and a surface of the protruded portion.

公开(公告)号：US10781096B2

公开(公告)日：2020-09-22

申请号：US16357588

申请日：2019-03-19

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Hun Lee ,  Kwang Su Kim ,  Tae Yoon Kim

IPC: B81B7/00 ,  B81B7/02 ,  B81C1/00

Abstract: A MEMS device includes a substrate, a MEMS element portion disposed on a surface of the substrate, a cap having a cavity formed to oppose the MEMS element portion, and a diffusion prevention layer formed on at least a portion of the cap, wherein at least one of the cap and the substrate includes a bonding layer disposed outside of the cavity, and wherein the cap includes a spreading prevention portion disposed between the bonding layer and the cavity and having a V-shape in cross-section.