Invention Grant
- Patent Title: Transformer based gate drive circuit
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Application No.: US16520253Application Date: 2019-07-23
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Publication No.: US10784859B2Publication Date: 2020-09-22
- Inventor: Sriram Chandrasekaran , Michael S. Hockema
- Applicant: Raytheon Company
- Applicant Address: US MA Waltham
- Assignee: Raytheon Company
- Current Assignee: Raytheon Company
- Current Assignee Address: US MA Waltham
- Main IPC: H03K17/687
- IPC: H03K17/687 ; H03F3/217 ; H03K17/06 ; H03K17/691 ; H02M3/07 ; H03K17/567 ; H01L29/16

Abstract:
A gate drive circuit for generating asymmetric drive voltages comprises a gate drive transformer comprising: a primary winding responsive to a pulse width module (PWM) input signal to generate a bipolar signal having a positive bias voltage and a negative bias voltage; and a secondary winding responsive to the bipolar signal to generate a PWM output signal. A first charge pump is connected to the secondary winding responsive to the PWM output signal to generate a level shifted PWM output signal. A second charge pump is connected to the secondary winding to generate a readjusted PWM output signal by decreasing at least a portion of the level shifted PWM output signal. A gate switching device is connected to the first charge pump and second charge pump. A level shifted PWM output signal establishes an ON condition and the readjusted PWM output signal establishes an OFF condition of the gate MOSFET.
Public/Granted literature
- US20200106436A1 Transformer Based Gate Drive Circuit Public/Granted day:2020-04-02
Information query
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