Transformer based gate drive circuit

    公开(公告)号:US10361698B2

    公开(公告)日:2019-07-23

    申请号:US15413166

    申请日:2017-01-23

    申请人: Raytheon Company

    摘要: A gate drive circuit for generating asymmetric drive voltages comprises a gate drive transformer comprising: a primary winding responsive to a pulse width module (PWM) input signal to generate a bipolar signal having a positive bias voltage and a negative bias voltage; and a secondary winding responsive to the bipolar signal to generate a PWM output signal. A first charge pump is connected to the secondary winding responsive to the PWM output signal to generate a level shifted PWM output signal. A second charge pump is connected to the secondary winding to generate a readjusted PWM output signal by decreasing at least a portion of the level shifted PWM output signal. A gate switching device is connected to the first charge pump and second charge pump. A level shifted PWM output signal establishes an ON condition and the readjusted PWM output signal establishes an OFF condition of the gate MOSFET.

    Transformer Based Gate Drive Circuit
    2.
    发明申请

    公开(公告)号:US20200106435A1

    公开(公告)日:2020-04-02

    申请号:US16520241

    申请日:2019-07-23

    申请人: Raytheon Company

    摘要: A gate drive circuit for generating asymmetric drive voltages comprises a gate drive transformer comprising: a primary winding responsive to a pulse width module (PWM) input signal to generate a bipolar signal having a positive bias voltage and a negative bias voltage; and a secondary winding responsive to the bipolar signal to generate a PWM output signal. A first charge pump is connected to the secondary winding responsive to the PWM output signal to generate a level shifted PWM output signal. A second charge pump is connected to the secondary winding to generate a readjusted PWM output signal by decreasing at least a portion of the level shifted PWM output signal. A gate switching device is connected to the first charge pump and second charge pump. A level shifted PWM output signal establishes an ON condition and the readjusted PWM output signal establishes an OFF condition of the gate MOSFET.

    Transformer based gate drive circuit

    公开(公告)号:US10778218B2

    公开(公告)日:2020-09-15

    申请号:US16520241

    申请日:2019-07-23

    申请人: Raytheon Company

    摘要: A gate drive circuit for generating asymmetric drive voltages comprises a gate drive transformer comprising: a primary winding responsive to a pulse width module (PWM) input signal to generate a bipolar signal having a positive bias voltage and a negative bias voltage; and a secondary winding responsive to the bipolar signal to generate a PWM output signal. A first charge pump is connected to the secondary winding responsive to the PWM output signal to generate a level shifted PWM output signal. A second charge pump is connected to the secondary winding to generate a readjusted PWM output signal by decreasing at least a portion of the level shifted PWM output signal. A gate switching device is connected to the first charge pump and second charge pump. A level shifted PWM output signal establishes an ON condition and the readjusted PWM output signal establishes an OFF condition of the gate MOSFET.

    Transformer based gate drive circuit

    公开(公告)号:US10784859B2

    公开(公告)日:2020-09-22

    申请号:US16520253

    申请日:2019-07-23

    申请人: Raytheon Company

    摘要: A gate drive circuit for generating asymmetric drive voltages comprises a gate drive transformer comprising: a primary winding responsive to a pulse width module (PWM) input signal to generate a bipolar signal having a positive bias voltage and a negative bias voltage; and a secondary winding responsive to the bipolar signal to generate a PWM output signal. A first charge pump is connected to the secondary winding responsive to the PWM output signal to generate a level shifted PWM output signal. A second charge pump is connected to the secondary winding to generate a readjusted PWM output signal by decreasing at least a portion of the level shifted PWM output signal. A gate switching device is connected to the first charge pump and second charge pump. A level shifted PWM output signal establishes an ON condition and the readjusted PWM output signal establishes an OFF condition of the gate MOSFET.

    Transformer Based Gate Drive Circuit
    5.
    发明申请

    公开(公告)号:US20200106436A1

    公开(公告)日:2020-04-02

    申请号:US16520253

    申请日:2019-07-23

    申请人: Raytheon Company

    摘要: A gate drive circuit for generating asymmetric drive voltages comprises a gate drive transformer comprising: a primary winding responsive to a pulse width module (PWM) input signal to generate a bipolar signal having a positive bias voltage and a negative bias voltage; and a secondary winding responsive to the bipolar signal to generate a PWM output signal. A first charge pump is connected to the secondary winding responsive to the PWM output signal to generate a level shifted PWM output signal. A second charge pump is connected to the secondary winding to generate a readjusted PWM output signal by decreasing at least a portion of the level shifted PWM output signal. A gate switching device is connected to the first charge pump and second charge pump. A level shifted PWM output signal establishes an ON condition and the readjusted PWM output signal establishes an OFF condition of the gate MOSFET.

    Transformer Based Gate Drive Circuit
    6.
    发明申请

    公开(公告)号:US20180241391A1

    公开(公告)日:2018-08-23

    申请号:US15413166

    申请日:2017-01-23

    申请人: Raytheon Company

    摘要: A gate drive circuit for generating asymmetric drive voltages comprises a gate drive transformer comprising: a primary winding responsive to a pulse width module (PWM) input signal to generate a bipolar signal having a positive bias voltage and a negative bias voltage; and a secondary winding responsive to the bipolar signal to generate a PWM output signal. A first charge pump is connected to the secondary winding responsive to the PWM output signal to generate a level shifted PWM output signal. A second charge pump is connected to the secondary winding to generate a readjusted PWM output signal by decreasing at least a portion of the level shifted PWM output signal. A gate switching device is connected to the first charge pump and second charge pump. A level shifted PWM output signal establishes an ON condition and the readjusted PWM output signal establishes an OFF condition of the gate MOSFET.