Invention Grant
- Patent Title: Memory with a reduced array data bus footprint
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Application No.: US16432138Application Date: 2019-06-05
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Publication No.: US10790012B2Publication Date: 2020-09-29
- Inventor: Michael V. Ho , Byung S. Moon
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Perkins Coie LLP
- Main IPC: G11C11/24
- IPC: G11C11/24 ; G11C11/4096 ; G11C11/4094 ; G11C11/4076 ; G11C11/4093 ; G11C7/10

Abstract:
Memory devices and systems in which array data lines of a local data bus are shared between two or more memory bank groups in a memory array. In one embodiment, a memory device is provided, comprising a memory array, I/O gating circuitry, and a local data bus. The local data bus can include a plurality of array data lines shared between two or more memory bank groups of the memory array. The local data bus can electrically couple and transfer data between the two or more memory bank groups and the I/O gating circuitry. In some embodiments, one or more data latches can be electrically coupled to the local data bus to (i) transfer data off the local data bus to free the plurality of data lines for subsequent data transfers and/or (ii) match varying data propagation timings on the local data with column generations of the memory bank groups.
Information query