Invention Grant
- Patent Title: Three-dimensional integrated circuit and method of manufacturing the same
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Application No.: US16280938Application Date: 2019-02-20
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Publication No.: US10790248B2Publication Date: 2020-09-29
- Inventor: Chun-Hung Chen , Ming-Tse Lin
- Applicant: United Microelectronics Corp.
- Applicant Address: TW Hsinchu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsinchu
- Agency: J.C. Patents
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@6385cd28
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L25/065 ; H01L25/00
Abstract:
Provided are a three-dimensional integrated circuit (3DIC) and a method of manufacturing the same. The 3DIC includes a first wafer, a second wafer, and a hybrid bonding structure. The second wafer is bonded to the first wafer by the hybrid bonding structure. The hybrid bonding structure includes a blocking layer between a hybrid bonding dielectric layer and a hybrid bonding metal layer.
Public/Granted literature
- US20200235063A1 THREE-DIMENSIONAL INTEGRATED CIRCUIT AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2020-07-23
Information query
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