- 专利标题： High voltage LDMOS transistor and methods for manufacturing the same
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申请号： US15912191申请日： 2018-03-05
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公开(公告)号： US10790387B2公开(公告)日： 2020-09-29
- 发明人: Ker-Hsiao Huo , Kong-Beng Thei , Chien-Chih Chou , Yi-Min Chen , Chen-Liang Chu
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： unknown Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 当前专利权人地址： unknown Hsinchu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/423 ; H01L29/66 ; H01L29/08 ; H01L29/10 ; H01L29/06
摘要：
A semiconductor device is provided. The semiconductor device comprises a substrate, a gate, a first doped region and a second doped region. The gate is over the substrate. The first doped region and the second doped region are in the substrate. The first doped region and the second doped region are of a same conductivity type and separated by the gate. The length of the first doped region is greater than a length of the second doped region in a direction substantially perpendicular to a channel length defined between the first doped region and the second doped region.
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