Invention Grant
- Patent Title: Impedance converter to achieve negative capacitance and/or negative inductance for radio frequency front end matching
-
Application No.: US15673261Application Date: 2017-08-09
-
Publication No.: US10790805B2Publication Date: 2020-09-29
- Inventor: Makar Snai
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Seyfarth Shaw LLP
- Main IPC: H03H11/44
- IPC: H03H11/44 ; H03F3/193 ; H03F1/56 ; H03F1/14 ; H03H11/48 ; H03H7/09 ; H03H7/38 ; H03H11/04 ; H03H11/34 ; H03H11/52 ; H04B1/04

Abstract:
An impedance converter circuit achieves negative capacitance and/or negative inductance for radio frequency (RF) front end impedance matching for low noise amplifier (LNA) designs. The impedance converter circuit includes a first transistor coupled to a first RF input at a source of the first transistor. The impedance converter circuit also includes a second transistor coupled to a second RF input at a source of the second transistor. The second transistor is cross-coupled to the first transistor to form a cross-coupled pair of transistors. The cross-coupled pair of transistors is configured to generate a negative capacitance or a negative inductance based on a load impedance coupled to a drain of the first transistor and a drain of the second transistor.
Public/Granted literature
Information query