Invention Grant
- Patent Title: Lateral/vertical transistor structures and process of making and using same
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Application No.: US16509414Application Date: 2019-07-11
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Publication No.: US10792658B2Publication Date: 2020-10-06
- Inventor: Eric D. Hobbs , Justin K. Valley
- Applicant: Berkeley Lights, Inc.
- Applicant Address: US CA Emeryville
- Assignee: Berkeley Lights, Inc.
- Current Assignee: Berkeley Lights, Inc.
- Current Assignee Address: US CA Emeryville
- Agency: Vista IP Law Group, LLP
- Main IPC: G01N15/06
- IPC: G01N15/06 ; B01L3/00 ; H01L21/00 ; G01N25/18 ; B03C5/00 ; B03C5/02 ; H01L27/146 ; H01L29/732

Abstract:
A microfluidic device can include a base an outer surface of which forms one or more enclosures for containing a fluidic medium. The base can include an array of individually controllable transistor structures each of which can comprise both a lateral transistor and a vertical transistor. The transistor structures can be light activated, and the lateral and vertical transistors can thus be photo transistors. Each transistor structure can be activated to create a temporary electrical connection from a region of the outer surface of the base (and thus fluidic medium in the enclosure) to a common electrical conductor. The temporary electrical connection can induce a localized electrokinetic force generally at the region, which can be sufficiently strong to move a nearby micro-object in the enclosure.
Public/Granted literature
- US20200078785A1 LATERAL/VERTICAL TRANSISTOR STRUCTURES AND PROCESS OF MAKING AND USING SAME Public/Granted day:2020-03-12
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