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    Lateral/vertical transistor structures and process of making and using same
    1.
    发明授权
    Lateral/vertical transistor structures and process of making and using same 有权

    公开(公告)号：US11596941B2

    公开(公告)日：2023-03-07

    申请号：US17063704

    申请日：2020-10-05

    Applicant: Berkeley Lights, Inc.

    Inventor： Eric D. Hobbs ,  Justin K. Valley

    IPC: B01L3/00 ,  B03C5/00 ,  B03C5/02 ,  H01L27/146 ,  H01L29/732

    Abstract: A microfluidic device can include a base an outer surface of which forms one or more enclosures for containing a fluidic medium. The base can include an array of individually controllable transistor structures each of which can comprise both a lateral transistor and a vertical transistor. The transistor structures can be light activated, and the lateral and vertical transistors can thus be photo transistors. Each transistor structure can be activated to create a temporary electrical connection from a region of the outer surface of the base (and thus fluidic medium in the enclosure) to a common electrical conductor. The temporary electrical connection can induce a localized electrokinetic force generally at the region, which can be sufficiently strong to move a nearby micro-object in the enclosure.

    LATERAL/VERTICAL TRANSISTOR STRUCTURES AND PROCESS OF MAKING AND USING SAME
    3.
    发明申请
    LATERAL/VERTICAL TRANSISTOR STRUCTURES AND PROCESS OF MAKING AND USING SAME 有权
    横向/垂直晶体管结构及其制造和使用过程

    公开(公告)号：US20160184821A1

    公开(公告)日：2016-06-30

    申请号：US14961215

    申请日：2015-12-07

    Applicant: Berkeley Lights, Inc.

    Inventor： Eric D. Hobbs ,  Justin K. Valley

    IPC: B01L3/00

    CPC classification number: B01L3/502715 ,  B01L3/502707 ,  B01L3/50273 ,  B01L3/502761 ,  B01L2200/0647 ,  B01L2300/0816 ,  B01L2300/0819 ,  B01L2400/0415 ,  B01L2400/0424 ,  B03C5/005 ,  B03C5/026 ,  H01L27/14681 ,  H01L29/732

    Abstract: A microfluidic device can include a base an outer surface of which forms one or more enclosures for containing a fluidic medium. The base can include an array of individually controllable transistor structures each of which can comprise both a lateral transistor and a vertical transistor. The transistor structures can be light activated, and the lateral and vertical transistors can thus be photo transistors. Each transistor structure can be activated to create a temporary electrical connection from a region of the outer surface of the base (and thus fluidic medium in the enclosure) to a common electrical conductor. The temporary electrical connection can induce a localized electrokinetic force generally at the region, which can be sufficiently strong to move a nearby micro-object in the enclosure.

    Abstract translation: 微流体装置可以包括底部，其外表面形成用于容纳流体介质的一个或多个外壳。 基极可以包括独立可控晶体管结构的阵列，其中每一个可以包括横向晶体管和垂直晶体管。 晶体管结构可以被光激活，并且横向和垂直晶体管因此可以是光电晶体管。 每个晶体管结构可以被激活以从基底的外表面（并且因此在外壳中的流体介质）的区域到公共电导体产生临时电连接。 临时电连接可以通常在该区域处引起局部电动力，其可以足够强以移动附近的微物体。

    LATERAL/VERTICAL TRANSISTOR STRUCTURES AND PROCESS OF MAKING AND USING SAME
    7.
    发明申请
    LATERAL/VERTICAL TRANSISTOR STRUCTURES AND PROCESS OF MAKING AND USING SAME 有权

    公开(公告)号：US20210129142A1

    公开(公告)日：2021-05-06

    申请号：US17063704

    申请日：2020-10-05

    Applicant: Berkeley Lights, Inc.

    Inventor： Eric D. Hobbs ,  Justin K. Valley

    IPC: B01L3/00 ,  B03C5/00 ,  B03C5/02 ,  H01L27/146

    Abstract: A microfluidic device can include a base an outer surface of which forms one or more enclosures for containing a fluidic medium. The base can include an array of individually controllable transistor structures each of which can comprise both a lateral transistor and a vertical transistor. The transistor structures can be light activated, and the lateral and vertical transistors can thus be photo transistors. Each transistor structure can be activated to create a temporary electrical connection from a region of the outer surface of the base (and thus fluidic medium in the enclosure) to a common electrical conductor. The temporary electrical connection can induce a localized electrokinetic force generally at the region, which can be sufficiently strong to move a nearby micro-object in the enclosure.

    Lateral/vertical transistor structures and process of making and using same
    8.
    发明授权
    Lateral/vertical transistor structures and process of making and using same 有权

    公开(公告)号：US10792658B2

    公开(公告)日：2020-10-06

    申请号：US16509414

    申请日：2019-07-11

    Applicant: Berkeley Lights, Inc.

    Inventor： Eric D. Hobbs ,  Justin K. Valley

    IPC: G01N15/06 ,  B01L3/00 ,  H01L21/00 ,  G01N25/18 ,  B03C5/00 ,  B03C5/02 ,  H01L27/146 ,  H01L29/732

    Abstract: A microfluidic device can include a base an outer surface of which forms one or more enclosures for containing a fluidic medium. The base can include an array of individually controllable transistor structures each of which can comprise both a lateral transistor and a vertical transistor. The transistor structures can be light activated, and the lateral and vertical transistors can thus be photo transistors. Each transistor structure can be activated to create a temporary electrical connection from a region of the outer surface of the base (and thus fluidic medium in the enclosure) to a common electrical conductor. The temporary electrical connection can induce a localized electrokinetic force generally at the region, which can be sufficiently strong to move a nearby micro-object in the enclosure.

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