Invention Grant
- Patent Title: Systems and methods for writing zeros to a memory array
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Application No.: US16555852Application Date: 2019-08-29
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Publication No.: US10795603B2Publication Date: 2020-10-06
- Inventor: Byung S. Moon , Harish N. Venkata , Gary L. Howe , Myung Ho Bae
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Fletcher Yoder, P.C.
- Main IPC: G06F3/06
- IPC: G06F3/06 ; G11C11/4072 ; G11C7/20 ; G11C8/04 ; G11C7/10 ; G06F11/10 ; G11C29/52 ; G11C29/02 ; G11C29/46
Abstract:
A memory device may include a memory array that includes multiple memory cells. The memory device may also include multiple sense amplifiers that, in operation, may each be connected to one or more memory cells. The sense amplifiers may be designed to assist in writing logical zeros to the multiple memory cells.
Public/Granted literature
- US20190384526A1 SYSTEMS AND METHODS FOR WRITING ZEROS TO A MEMORY ARRAY Public/Granted day:2019-12-19
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