Invention Grant
- Patent Title: Sequential read mode static random access memory (SRAM)
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Application No.: US16031439Application Date: 2018-07-10
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Publication No.: US10796750B2Publication Date: 2020-10-06
- Inventor: Igor Arsovski , Akhilesh Patil , Eric D. Hunt-Schroeder
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Roberts Calderon Safran & Cole, P.C.
- Agent Michael Le Strange; Andrew M. Calderon
- Main IPC: G11C7/12
- IPC: G11C7/12 ; G11C11/419 ; G11C11/4074 ; G11C11/4076

Abstract:
The present disclosure relates to a structure including a sequential mode read controller which is configured to receive a sequential read enable burst signal and a starting word line address, identify consecutive read operations from an array of storage cells accessed via a plurality of word lines, precharge a plurality of bit lines of the storage cells no more than once during the consecutive read operations, and hold a word line of the word lines active throughout the consecutive read operations. The sequential read enable burst signal and a starting word line address are decoded to select a row address and activate the corresponding word line from a plurality of word lines in the array.
Public/Granted literature
- US20200020388A1 SEQUENTIAL READ MODE STATIC RANDOM ACCESS MEMORY (SRAM) Public/Granted day:2020-01-16
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