- 专利标题: Methods of fabricating three-dimensional magnetic memory devices
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申请号: US15858765申请日: 2017-12-29
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公开(公告)号: US10797233B2公开(公告)日: 2020-10-06
- 发明人: Marcin Gajek , Michail Tzoufras , Davide Guarisco , Eric Michael Ryan
- 申请人: SPIN MEMORY, INC.
- 申请人地址: US CA Fremont
- 专利权人: SPIN MEMORY, INC.
- 当前专利权人: SPIN MEMORY, INC.
- 当前专利权人地址: US CA Fremont
- 代理机构: Morgan, Lewis & Bockius LLP
- 主分类号: H01L43/12
- IPC分类号: H01L43/12 ; H01L43/08 ; H01L27/22 ; G11C11/16 ; H01L43/10 ; H01L43/06
摘要:
The various implementations described herein include methods, devices, and systems for fabricating magnetic memory devices. In one aspect, a method of fabricating a magnetic memory device includes: (1) providing a dielectric substrate with a metallic core protruding from the dielectric substrate, where: (a) a first portion of the metallic core is surrounded by the dielectric substrate and a second portion of the metallic core protrudes away from a surface of the dielectric substrate; and (b) the second portion includes: (i) a surface offset from the surface of the dielectric substrate and (ii) sidewalls extending away from the surface of the dielectric substrate to the offset surface; (2) depositing a first ferromagnetic layer on exposed surfaces of the metallic core and the dielectric substrate; (3) depositing a spacer layer on exposed surfaces of the first ferromagnetic layer; and (4) depositing a second ferromagnetic layer on exposed surfaces of the spacer layer.