Invention Grant
- Patent Title: Plasma processing apparatus and plasma processing method
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Application No.: US16111796Application Date: 2018-08-24
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Publication No.: US10804080B2Publication Date: 2020-10-13
- Inventor: Tooru Aramaki , Kenetsu Yokogawa
- Applicant: Hitachi High-Tech Corporation
- Applicant Address: JP Tokyo
- Assignee: HITACHI HIGH-TECH CORPORATION
- Current Assignee: HITACHI HIGH-TECH CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Miles & Stockbridge, P.C.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@17d3dd4e
- Main IPC: H01J37/32
- IPC: H01J37/32 ; H01L21/67 ; H01L21/3065 ; H01L21/683

Abstract:
The reliability of a plasma processing apparatus can be improved, and the yield of plasma processing can be improved. A plasma etching apparatus 100 has a susceptor ring 113 covering the surface of a sample stage, a conductor ring 131 disposed in the interior of the susceptor ring 113 and to which second high frequency electric power is supplied from a second high frequency power source, and an electric power supply connector 161 configuring a path for supplying the second high frequency electric power to the conductor ring 131. Further, the electric power supply connector 161 includes a plate spring 135 disposed in the interior of an insulating boss 144 disposed in a through hole 120c of the sample stage and having resiliency in such a manner that the plate spring 135 is connected to an upper terminal 143 and a lower terminal 145, is biased in an up-down direction P, and is expanded and contracted.
Public/Granted literature
- US20190198297A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD Public/Granted day:2019-06-27
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