公开(公告)号：US11682542B2

公开(公告)日：2023-06-20

申请号：US17166066

申请日：2021-02-03

Applicant: HITACHI HIGH-TECH CORPORATION

Inventor： Tooru Aramaki ,  Kenetsu Yokogawa ,  Masaru Izawa

IPC: H01J37/32 ,  C23C16/46 ,  C23C16/458 ,  C23C16/511

CPC classification number: H01J37/32532 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/463 ,  C23C16/511 ,  H01J37/32009 ,  H01J37/32192 ,  H01J37/32522 ,  H01J37/32715 ,  H01J37/32724

Abstract: A plasma processing device that includes a processing chamber which is disposed in a vacuum vessel and is decompressed internally, a sample stage which is disposed in the processing chamber and on which a sample of a process target is disposed and held, and a plasma formation unit which forms plasma using process gas and processes the sample using the plasma, and the plasma processing device includes: a dielectric film which is disposed on a metallic base configuring the sample stage and connected to a ground and includes a film-like electrode supplied with high-frequency power internally; a plurality of elements which are disposed in a space in the base and have a heat generation or cooling function; and a feeding path which supplies power to the plurality of elements, wherein a filter to suppress a high frequency is not provided on the feeding path.

公开(公告)号：US11842885B2

公开(公告)日：2023-12-12

申请号：US17021149

申请日：2020-09-15

Applicant: HITACHI HIGH-TECH CORPORATION

Inventor： Tooru Aramaki ,  Kenetsu Yokogawa ,  Masaru Izawa

IPC: H01J37/32 ,  H01L21/311

CPC classification number: H01J37/32183 ,  H01J37/32045 ,  H01J37/32174 ,  H01J37/32192 ,  H01J37/32577 ,  H01J37/32715 ,  H01L21/31116

Abstract: A plasma processing apparatus or a plasma processing method that processes a wafer to be processed, which is placed on a surface of a sample stage arranged in a processing chamber inside a vacuum container, using a plasma formed in the processing chamber, the apparatus or method including processing the wafer by adjusting a first high-frequency power to be supplied to a first electrode arranged inside the sample stage and a second high-frequency power to be supplied, via a resonant circuit, to a second electrode which is arranged in an inner side of a ring-shaped member made of a dielectric arranged on an outer peripheral side of a surface of the sample stage on which the wafer is placed, during the processing.

公开(公告)号：US10804080B2

公开(公告)日：2020-10-13

申请号：US16111796

申请日：2018-08-24

Applicant: Hitachi High-Tech Corporation

Inventor： Tooru Aramaki ,  Kenetsu Yokogawa

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/3065 ,  H01L21/683

Abstract: The reliability of a plasma processing apparatus can be improved, and the yield of plasma processing can be improved. A plasma etching apparatus 100 has a susceptor ring 113 covering the surface of a sample stage, a conductor ring 131 disposed in the interior of the susceptor ring 113 and to which second high frequency electric power is supplied from a second high frequency power source, and an electric power supply connector 161 configuring a path for supplying the second high frequency electric power to the conductor ring 131. Further, the electric power supply connector 161 includes a plate spring 135 disposed in the interior of an insulating boss 144 disposed in a through hole 120c of the sample stage and having resiliency in such a manner that the plate spring 135 is connected to an upper terminal 143 and a lower terminal 145, is biased in an up-down direction P, and is expanded and contracted.