- 专利标题: Charged particle device and wiring method
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申请号: US15939689申请日: 2018-03-29
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公开(公告)号: US10808312B2公开(公告)日: 2020-10-20
- 发明人: Yoichiro Hashimoto , Eiko Nakazawa , Mami Konomi , Shuichi Takeuchi
- 申请人: HITACHI HIGH-TECH CORPORATION
- 申请人地址: JP Tokyo
- 专利权人: HITACHI HIGH-TECH CORPORATION
- 当前专利权人: HITACHI HIGH-TECH CORPORATION
- 当前专利权人地址: JP Tokyo
- 代理机构: Miles & Stockbridge, P.C.
- 优先权: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@30eec48
- 主分类号: C23C14/22
- IPC分类号: C23C14/22 ; H01J37/317
摘要:
An object of the present invention is to provide: a wiring method in which wiring is performed in a vacuum chamber of a charged particle device without using gas deposition or the like; and a charged particle device.In order to achieve the above-described object, the present invention proposes: a wiring method in which a wiring line composed of an ionic liquid is formed by dropping an ionic liquid on a sample or preparing an ionic liquid on a sample table, on which a sample is placed in advance, and irradiating a wiring track between a wiring start point and a wiring end point with a charged particle beam; and a charged particle device. According to this configuration, wiring can be performed in a vacuum chamber of a charged particle device without using a gas deposition method or the like.
公开/授权文献
- US20180216223A1 CHARGED PARTICLE DEVICE AND WIRING METHOD 公开/授权日:2018-08-02
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