公开(公告)号：US10808312B2

公开(公告)日：2020-10-20

申请号：US15939689

申请日：2018-03-29

申请人： HITACHI HIGH-TECH CORPORATION

发明人： Yoichiro Hashimoto ,  Eiko Nakazawa ,  Mami Konomi ,  Shuichi Takeuchi

IPC分类号： C23C14/22 ,  H01J37/317

摘要： An object of the present invention is to provide: a wiring method in which wiring is performed in a vacuum chamber of a charged particle device without using gas deposition or the like; and a charged particle device.In order to achieve the above-described object, the present invention proposes: a wiring method in which a wiring line composed of an ionic liquid is formed by dropping an ionic liquid on a sample or preparing an ionic liquid on a sample table, on which a sample is placed in advance, and irradiating a wiring track between a wiring start point and a wiring end point with a charged particle beam; and a charged particle device. According to this configuration, wiring can be performed in a vacuum chamber of a charged particle device without using a gas deposition method or the like.