Invention Grant
- Patent Title: Method for fabricating metal chalcogenide thin films
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Application No.: US16047871Application Date: 2018-07-27
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Publication No.: US10811254B2Publication Date: 2020-10-20
- Inventor: Sun Jin Yun , JungWook Lim , Kwang Hoon Jung , Hyun Jun Chai
- Applicant: Electronics and Telecommunications Research Institute
- Applicant Address: KR Daejeon
- Assignee: Electronics and Telecommunications Research Institute
- Current Assignee: Electronics and Telecommunications Research Institute
- Current Assignee Address: KR Daejeon
- Agency: Rabin & Berdo, P.C.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@b9cc8b5 com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@7423a0ea
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C23C16/56 ; H01L21/56 ; C23C16/30 ; C23C16/455 ; H01L29/24 ; C23C14/18 ; H01L29/66 ; C23C14/58 ; C23C14/06 ; H01L29/786 ; H01L29/778
Abstract:
Provided is a method for fabricating high-uniformity and high-quality metal chalcogenide thin films. The method for fabricating metal chalcogenide thin films may include forming a metal precursor thin film including a metal thin film and a chalcogen thin film disposed on the upper surface or lower surface of the metal thin film; and performing a chalcogenization process for providing a chalcogen source on the metal precursor thin film to form a first metal chalcogenide thin film.
Public/Granted literature
- US20190067005A1 METHOD FOR FABRICATING METAL CHALCOGENIDE THIN FILMS Public/Granted day:2019-02-28
Information query
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