-
公开(公告)号：US09257579B2
公开(公告)日：2016-02-09
申请号：US13952904
申请日：2013-07-29
发明人： Sun Jin Yun , Chang Bong Yeon , Yoo Jeong Lee , JungWook Lim
IPC分类号： H01L31/056 , H01L31/0232 , H01L31/18 , H01L31/0224 , H01L31/0236 , H01L51/52 , H01L33/40 , H01L21/00
CPC分类号： H01L29/43 , H01L29/423 , H01L31/0224 , H01L31/022425 , H01L31/02327 , H01L31/02366 , H01L31/056 , H01L31/1884 , H01L33/40 , H01L33/405 , H01L51/5203 , H01L51/5209 , H01L2933/0016 , Y02E10/52
摘要： Provided is a method of fabricating an electronic device. The method according to the present inventive concept may include forming a lower electrode having a flat portion and protrusions on a substrate, forming an intermediate layer on the lower electrode, and forming an upper electrode on the intermediate layer. The forming of the lower electrode may include forming a conductive film by depositing a first metal on the substrate, and depositing a second metal on the conductive film to prepare an alloy of the first metal and the second metal.
摘要翻译： 提供一种制造电子设备的方法。 根据本发明构思的方法可以包括形成具有平坦部分的下电极和在基板上的突起，在下电极上形成中间层，并在中间层上形成上电极。 下电极的形成可以包括通过在基板上沉积第一金属形成导电膜，并在导电膜上沉积第二金属以制备第一金属和第二金属的合金。
-
公开(公告)号：US11081586B2
公开(公告)日：2021-08-03
申请号：US16672838
申请日：2019-11-04
发明人： Himchan Oh , Sun Jin Yun , Jeong Ik Lee , Chi-Sun Hwang
IPC分类号： H01L29/786 , H01L29/66 , H01L29/423 , H01L29/417
摘要： Provided is a thin film transistor. The thin film transistor includes a substrate, a channel part extending on the substrate in a first direction parallel to an upper surface of the substrate, source/drain electrodes connected to both ends of the channel part in the first direction, and a gate electrode spaced apart from the channel part in a second direction intersecting the first direction and parallel to the upper surface of the substrate. Each of the channel part, the source/drain electrodes, and the gate electrode is provided as a single layer.
-
公开(公告)号：US09825226B2
公开(公告)日：2017-11-21
申请号：US14957316
申请日：2015-12-02
发明人： Sun Jin Yun , Changbong Yeon
CPC分类号： H01L51/0021 , G06F3/041 , G06F2203/04103
摘要： Provided is a method for manufacturing a conductive film. The method for manufacturing a conductive film includes providing a polymer thin-film on a base film, treating the polymer thin-film by using 10 M to 15 M of nitric acid, and washing the polymer thin-film treated with nitric acid. The nitric acid treatment is performed at room temperature for about 7 minutes to about 13 minutes.
-
公开(公告)号：US10811254B2
公开(公告)日：2020-10-20
申请号：US16047871
申请日：2018-07-27
发明人： Sun Jin Yun , JungWook Lim , Kwang Hoon Jung , Hyun Jun Chai
IPC分类号： H01L21/02 , C23C16/56 , H01L21/56 , C23C16/30 , C23C16/455 , H01L29/24 , C23C14/18 , H01L29/66 , C23C14/58 , C23C14/06 , H01L29/786 , H01L29/778
摘要： Provided is a method for fabricating high-uniformity and high-quality metal chalcogenide thin films. The method for fabricating metal chalcogenide thin films may include forming a metal precursor thin film including a metal thin film and a chalcogen thin film disposed on the upper surface or lower surface of the metal thin film; and performing a chalcogenization process for providing a chalcogen source on the metal precursor thin film to form a first metal chalcogenide thin film.
-
公开(公告)号：US10580714B2
公开(公告)日：2020-03-03
申请号：US16175284
申请日：2018-10-30
发明人： Sun Jin Yun , Junjae Yang , Changbong Yeon , JungWook Lim
摘要： Provided is method of manufacturing a conductive film. The method includes forming a conductive film including a plurality of flakes on a substrate, wherein the conductive film is a semiconductor or a conductor, and forming a passivation region selectively on a boundary between the flakes adjacent to each other. The passivation region includes a metal compound selected from the group consisting of metal chalcogenide and transition metal chalcogenide. The forming of the passivation region includes providing a solution containing a first precursor including a cation of the metal compound and a second precursor including an anion of the metal compound on the conductive film. pH of the solution is between 7.0 and 10.0.
-
公开(公告)号：US10153141B2
公开(公告)日：2018-12-11
申请号：US14621739
申请日：2015-02-13
发明人： Sun Jin Yun , Kyu Sung Lee , JungWook Lim
摘要： Provided is an apparatus for monitoring a gas and plasma process equipment including the same. The apparatus includes: a housing including a gas inflow hole, a gas discharge hole, and windows; a light source disposed adjacent to one of the windows outside the housing to provide source light to a gas supplied between the gas inflow hole and the gas discharge hole; a sensor disposed adjacent to the other of the windows outside the housing to detect fluorescence emitted from the gas by the source light; and a coil disposed in the housing between the gas inflow hole and the gas discharge hole to heat and decompose the gas between the light source and the sensor, thereby increasing the fluorescence emitted from the gas.
-
公开(公告)号：US09397248B2
公开(公告)日：2016-07-19
申请号：US14291146
申请日：2014-05-30
发明人： JungWook Lim , Sun Jin Yun , Seong Hyun Lee
IPC分类号： H01L31/02 , H01L31/054 , H01L31/0376 , H01L31/06 , H01L31/056
CPC分类号： H01L31/0549 , H01L31/03762 , H01L31/056 , H01L31/06 , Y02E10/52 , Y02E10/548
摘要： A solar cell includes a first electrode; a lower light absorption layer disposed on the first electrode; an upper light absorption layer disposed on the lower light absorption layer; and an intermediate reflector layer provided between the lower light absorption layer and the upper light absorption layer, the intermediate reflector layer being comprised of copper oxide. The intermediate reflector layer includes a plurality of copper oxide layers including a lower copper oxide layer making contact with the lower light absorption layer, an upper copper oxide layer making contact with the upper light absorption layer, and an intermediate copper oxide layer provided between the lower copper oxide layer and the upper copper oxide layer. The plurality of copper oxide layers have respective oxygen amounts that gradually increase from the upper copper oxide layer to the lower copper oxide layer.
摘要翻译： 太阳能电池包括第一电极; 设置在所述第一电极上的下部光吸收层; 设置在下部光吸收层上的上部光吸收层; 以及设置在下部光吸收层和上部光吸收层之间的中间反射层，中间反射层由氧化铜构成。 中间反射层包括多个铜氧化物层，包括与下部光吸收层接触的下部氧化铜层，与上部光吸收层接触的上部氧化铜层，以及设置在下部光吸收层之间的中间氧化铜层 铜氧化物层和上部氧化铜层。 多个氧化铜层具有从上部氧化铜层向下部氧化铜层逐渐增加的氧量。
-
公开(公告)号：US11239353B2
公开(公告)日：2022-02-01
申请号：US16670412
申请日：2019-10-31
发明人： Sun Jin Yun , Kwang Hoon Jung , So Hyun Kim , Jung Wook Lim
摘要： Provided is a method of manufacturing a semiconductor device. The method includes providing a substrate, forming uneven portions in a region of the substrate in which an electrode is to be formed, forming a precursor film formed of a two-dimensional material on the substrate on which the uneven portions are formed, forming a metal chalcogen film by performing a chalcogenation process on the formed precursor film, and forming the electrode on the formed metal chalcogen film.
-
公开(公告)号：US10545114B2
公开(公告)日：2020-01-28
申请号：US15947213
申请日：2018-04-06
发明人： Doo Hyeb Youn , Sun Jin Yun , Changbong Yeon , Young-Jun Yu , HongKyw Choi
IPC分类号： G01N27/414 , G01N31/10 , G01N27/12 , D01D5/00
摘要： Provided is a chemical sensor which includes an alignment frame that has an opening that passes through the inside of the alignment frame and includes first and second side portions that face each other with the opening therebetween and insulation portions disposed between the first and second side portions, a plurality of sensing fibers disposed in two-dimensions across the opening of the alignment frame so as to connect the first side portion and the second side portion, and a source pattern and a drain pattern connected to the first side portion and the second side portion of the alignment frame, respectively.
-
公开(公告)号：US10483300B2
公开(公告)日：2019-11-19
申请号：US15993765
申请日：2018-05-31
发明人： JungWook Lim , Sun Jin Yun , Tae Yoon Kim , Jeho Na , Seong Hyun Lee , Kwang Hoon Jung
IPC分类号： H01L27/144 , H01L31/113 , H01L31/0336 , G11C13/04 , H01L31/18 , G11C16/04 , G11C16/18 , H01L31/0296
摘要： Provided is an optically restorable semiconductor device including a gate electrode, a gate insulation film on the gate electrode, a photo-responsive semiconductor film on the gate insulation film, and an interface charge part disposed adjacent to an interface between the photo-responsive semiconductor film and the gate insulation film, wherein the interface charge part includes charge traps, and the interface charge part and the photo-responsive semiconductor film directly contact with each other.
-
-
-
-
-
-
-
-
-
搜索结果
13 条记录 (耗时 0.017 秒)
