公开(公告)号：US10811254B2

公开(公告)日：2020-10-20

申请号：US16047871

申请日：2018-07-27

申请人： Electronics and Telecommunications Research Institute

发明人： Sun Jin Yun ,  JungWook Lim ,  Kwang Hoon Jung ,  Hyun Jun Chai

IPC分类号： H01L21/02 ,  C23C16/56 ,  H01L21/56 ,  C23C16/30 ,  C23C16/455 ,  H01L29/24 ,  C23C14/18 ,  H01L29/66 ,  C23C14/58 ,  C23C14/06 ,  H01L29/786 ,  H01L29/778

摘要： Provided is a method for fabricating high-uniformity and high-quality metal chalcogenide thin films. The method for fabricating metal chalcogenide thin films may include forming a metal precursor thin film including a metal thin film and a chalcogen thin film disposed on the upper surface or lower surface of the metal thin film; and performing a chalcogenization process for providing a chalcogen source on the metal precursor thin film to form a first metal chalcogenide thin film.