Invention Grant
- Patent Title: Method for etching a carbon-containing feature
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Application No.: US16161744Application Date: 2018-10-16
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Publication No.: US10811256B2Publication Date: 2020-10-20
- Inventor: Mitsuya Utsuno , Tomohiro Kubota , Dai Ishikawa
- Applicant: ASM IP Holding B.V.
- Applicant Address: NL Almere
- Assignee: ASM IP Holding B.V.
- Current Assignee: ASM IP Holding B.V.
- Current Assignee Address: NL Almere
- Agency: Snell & Wilmer L.L.P.
- Main IPC: H01L21/027
- IPC: H01L21/027 ; H01L21/311 ; H01J37/32

Abstract:
Methods for etching a carbon-containing feature are provided. The methods may include: providing a substrate having a carbon-containing feature formed thereon in a reaction space; supplying helium gas and an oxidizing to the reaction space; generating a plasma within the reaction space from a gas mixture comprising helium gas and the oxidizing gas; and anisotropically etching the carbon-containing feature utilizing the plasma to cause lateral etching of the carbon-containing feature.
Public/Granted literature
- US20200118811A1 METHOD FOR ETCHING A CARBON-CONTAINING FEATURE Public/Granted day:2020-04-16
Information query
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