公开(公告)号：US20220350248A1

公开(公告)日：2022-11-03

申请号：US17724457

申请日：2022-04-19

Applicant: ASM IP Holding B.V.

Inventor： Zecheng Liu ,  Takashi Yoshida ,  Tomohiro Kubota ,  Hideaki Fukuda

IPC: G03F7/11 ,  H01L21/033 ,  H01J37/32 ,  C23C16/455 ,  C23C16/02 ,  C23C16/50 ,  C23C16/52

Abstract: Methods of forming structures including a photoresist underlayer and an adhesion layer and structures including the photoresist underlayer and adhesion layer are disclosed. Exemplary methods include forming the photoresist underlayer and forming an adhesion layer using a cyclical deposition process. The adhesion layer can be formed within the same reaction chamber used to form the photoresist underlayer.

公开(公告)号：US20190259612A1

公开(公告)日：2019-08-22

申请号：US15900425

申请日：2018-02-20

Applicant: ASM IP Holding B.V.

Inventor： Toshihisa Nozawa ,  Dai Ishikawa ,  Tomohiro Kubota

IPC: H01L21/033 ,  H01L21/311 ,  H01L21/027 ,  H01L21/02

Abstract: A method of spacer-defined direct patterning in semiconductor fabrication includes: providing a photoresist structure having a target width of lines; trimming the photoresist structures such that a width of each trimmed photoresist structure is smaller than the target width; depositing an oxide film on the template, thereby entirely covering with the oxide film an exposed top surface of the template and the trimmed photoresist structures; etching the oxide film-covered template to remove an unwanted portion of the oxide film without removing the trimmed photoresist structures so as to form vertical spacers isolated from each other, each spacer substantially maintaining the target width and being constituted by the trimmed photoresist structures and a vertical portion of the oxide film covering sidewalls of the trimmed photoresist structures; and etching the spacer-formed template to transfer a pattern constituted by the spacers to the template.

公开(公告)号：US10381219B1

公开(公告)日：2019-08-13

申请号：US16171098

申请日：2018-10-25

Applicant: ASM IP Holding B.V.

Inventor： Shinya Ueda ,  Tomomi Takayama ,  Taishi Ebisudani ,  Toshiya Suzuki ,  Tomohiro Kubota

IPC: C23C16/34 ,  H01L21/02 ,  C23C16/455

Abstract: Methods for forming a silicon nitride film by a plasma enhanced atomic layer deposition (PEALD) process are provided. The methods may include: providing a substrate into a reaction chamber; and performing at least one unit deposition cycle of a PEALD process, wherein a unit cycle comprises, contacting the substrate with a vapor phase reactant comprising a silicon precursor; and contacting the substrate with a reactive species generated from a gas mixture comprising a nitrogen precursor and an additional gas. Methods for improving the etch characteristics of a silicon nitride film utilizing a post deposition plasma treatment are also provided.

公开(公告)号：US20190172718A1

公开(公告)日：2019-06-06

申请号：US15832188

申请日：2017-12-05

Applicant: ASM IP Holding B.V.

Inventor： Tomohiro Kubota ,  Yoshio Susa

IPC: H01L21/308 ,  H01L21/3213 ,  H01L21/311

Abstract: A method of forming vertical spacers for spacer-defined multiple patterning, includes: depositing a first conformal pattern-transfer film having a first film stress, and continuously depositing a second conformal pattern-transfer film having a second film stress on a template; dry-etching the template except for a core material and a vertical portion of the first and second pattern-transfer films to form vertical spacers; and dry-etching the core material, forming a vacant space between the vertical spacers, wherein by adjusting the difference in film stress between the first and second pattern-transfer films, the leaning angle of the spacers is adjusted.

公开(公告)号：US20230250531A1

公开(公告)日：2023-08-10

申请号：US18130959

申请日：2023-04-05

Applicant: ASM IP Holding B.V.

Inventor： Tomohiro Kubota ,  Mitsuya Utsuno ,  Toshihisa Nozawa ,  Seiji Samukawa ,  Hua Hsuan Chen

IPC: C23C16/455 ,  H05H3/02 ,  C23C16/40 ,  C23C16/48

CPC classification number: C23C16/45536 ,  H05H3/02 ,  C23C16/402 ,  C23C16/486 ,  C23C16/45553

Abstract: Methods of forming structures using a neutral beam, structures formed using a neutral beam, and reactor systems for forming the structures are disclosed. The neutral beam can be used to provide activated species during deposition of a layer and/or to provide activated species to treat a deposited layer.

公开(公告)号：US20220108881A1

公开(公告)日：2022-04-07

申请号：US17449670

申请日：2021-10-01

Applicant: ASM IP Holding B.V.

Inventor： Tomohiro Kubota ,  Shinya Ueda

IPC: H01L21/02 ,  H01L21/311

Abstract: Methods of forming silicon nitride on a sidewall of a feature are disclosed. Exemplary methods include providing a substrate comprising a feature comprising a sidewall surface and a surface adjacent the sidewall surface, forming a silicon oxide layer overlying the sidewall surface and the surface adjacent the sidewall surface, using a cyclical deposition process, depositing a silicon nitride layer overlying the silicon oxide layer, and exposing the silicon nitride layer to activated species generated from a hydrogen-containing gas. Exemplary methods can additionally include selectively removing a portion of the silicon nitride layer. Structures formed using the methods and systems for performing the methods are also disclosed.

公开(公告)号：US20200118811A1

公开(公告)日：2020-04-16

申请号：US16161744

申请日：2018-10-16

Applicant: ASM IP Holding B.V.

Inventor： Mitsuya Utsuno ,  Tomohiro Kubota ,  Dai Ishikawa

IPC: H01L21/027 ,  H01L21/311

Abstract: Methods for etching a carbon-containing feature are provided. The methods may include: providing a substrate having a carbon-containing feature formed thereon in a reaction space; supplying helium gas and an oxidizing to the reaction space; generating a plasma within the reaction space from a gas mixture comprising helium gas and the oxidizing gas; and anisotropically etching the carbon-containing feature utilizing the plasma to cause lateral etching of the carbon-containing feature.

公开(公告)号：US10290508B1

公开(公告)日：2019-05-14

申请号：US15832188

申请日：2017-12-05

Applicant: ASM IP Holding B.V.

Inventor： Tomohiro Kubota ,  Yoshio Susa

IPC: H01L21/308 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/033 ,  H01L29/66

Abstract: A method of forming vertical spacers for spacer-defined multiple patterning, includes: depositing a first conformal pattern-transfer film having a first film stress, and continuously depositing a second conformal pattern-transfer film having a second film stress on a template; dry-etching the template except for a core material and a vertical portion of the first and second pattern-transfer films to form vertical spacers; and dry-etching the core material, forming a vacant space between the vertical spacers, wherein by adjusting the difference in film stress between the first and second pattern-transfer films, the leaning angle of the spacers is adjusted.

公开(公告)号：US20230340663A1

公开(公告)日：2023-10-26

申请号：US18137930

申请日：2023-04-21

Applicant: ASM IP Holding B.V.

Inventor： Fanyong Ran ,  Zecheng Liu ,  Tomohiro Kubota ,  Takashi Yoshida ,  Kai Okabe

IPC: C23C16/455 ,  C23C16/32 ,  C23C16/52

CPC classification number: C23C16/32 ,  C23C16/45531 ,  C23C16/4554 ,  C23C16/45553 ,  C23C16/52

Abstract: Methods of forming a silicon oxycarbide layer on a surface of a substrate are disclosed. Exemplary methods include providing an oxygen-free reactant to a reaction chamber and performing one or more deposition cycles, wherein each deposition cycle includes providing a silicon precursor to the reaction chamber for a silicon precursor pulse period and providing plasma power for a plasma power period to form the silicon oxycarbide layer. Exemplary silicon precursors comprise a molecule comprising silicon, oxygen, carbon, and optionally nitrogen. The silicon precursor can further include one or more of (i) one or two silicon-oxygen bonds, (ii) one or two silicon-carbon bonds, or (iii) one carbon-carbon double bond.

公开(公告)号：US20210017648A1

公开(公告)日：2021-01-21

申请号：US16930211

申请日：2020-07-15

Applicant: ASM IP Holding B.V.

Inventor： Tomohiro Kubota ,  Mitsuya Utsuno ,  Toshihisa Nozawa ,  Seiji Samukawa ,  Hua Hsuan Chen

IPC: C23C16/455 ,  H05H3/02 ,  C23C16/48 ,  C23C16/40

Abstract: Methods of forming structures using a neutral beam, structures formed using a neutral beam, and reactor systems for forming the structures are disclosed. The neutral beam can be used to provide activated species during deposition of a layer and/or to provide activated species to treat a deposited layer.