A method of controlling a chemical mechanical polishing (CMP) process, a temperature control, and a CMP apparatus, the method including measuring actual temperatures of at least two regions in a platen in real time during the CMP process in which a polishing pad attached to the platen polishes a substrate held by a polishing head using slurry and deionized water; receiving the measured actual temperatures of the regions; and individually controlling the actual temperatures of the regions in real time during the CMP process to provide the regions with a predetermined set CMP process temperature.