- 专利标题： Techniques for controlling precursors in chemical deposition processes
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申请号： US15946483申请日： 2018-04-05
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公开(公告)号： US10822699B2公开(公告)日： 2020-11-03
- 发明人: Elaina Babayan , Sarah White , Vijay Venugopal , Jonathan Bakke
- 申请人： Varian Semiconductor Equipment Associates, Inc.
- 申请人地址： US MA Gloucester
- 专利权人： Varian Semiconductor Equipment Associates, Inc.
- 当前专利权人： Varian Semiconductor Equipment Associates, Inc.
- 当前专利权人地址： US MA Gloucester
- 主分类号： C23C16/50
- IPC分类号： C23C16/50 ; C23C16/52 ; C23C16/448 ; H01L21/67 ; C23C16/455
摘要：
An apparatus for controlling precursor flow. The apparatus may include a processor; and a memory unit coupled to the processor, including a flux control routine. The flux control routine may be operative on the processor to monitor the precursor flow and may include a flux calculation processor to determine a precursor flux value based upon a change in detected signal intensity received from a cell of a gas delivery system to deliver a precursor.
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