Invention Grant
- Patent Title: Microelectronic package utilizing embedded bridge through-silicon-via interconnect component and related methods
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Application No.: US15286582Application Date: 2016-10-06
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Publication No.: US10833052B2Publication Date: 2020-11-10
- Inventor: Shing-Yih Shih
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L21/48 ; H01L23/538 ; H01L23/498 ; H01L25/065 ; H01L23/14

Abstract:
A semiconductor package includes a resin molded package substrate comprising a resin molded core, a plurality of metal vias in the resin molded core, a front-side RDL structure, and a back-side RDL structure. A bridge TSV interconnect component is embedded in the resin molded core. The bridge TSV interconnect component has a silicon substrate portion, an RDL structure integrally constructed on the silicon substrate portion, and TSVs in the silicon substrate portion. A first semiconductor die and a second semiconductor die are mounted on the front-side RDL structure. The first semiconductor die and the second semiconductor die are coplanar.
Public/Granted literature
- US20180102311A1 SEMICONDUCTOR PACKAGE UTILIZING EMBEDDED BRIDGE THROUGH-SILICON-VIA INTERCONNECT COMPONENT Public/Granted day:2018-04-12
Information query
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