Invention Grant
- Patent Title: Side-biased current sensor with improved dynamic range
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Application No.: US15864313Application Date: 2018-01-08
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Publication No.: US10852363B2Publication Date: 2020-12-01
- Inventor: Klaus Elian , Rainer Markus Schaller
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Harrity & Harrity, LLP
- Main IPC: G01R15/20
- IPC: G01R15/20 ; G01R33/02 ; G01R33/00 ; G01R19/00 ; H01F7/02

Abstract:
A semiconductor package may include a sensor chip to measure an amount of electrical current in a current medium. The sensor chip may include a first magnetic sensing element and a second magnetic sensing element. The semiconductor package may include a magnet that produces a magnetic field. The magnet may be arranged asymmetrically with respect to the first magnetic sensing element and the second magnetic sensing element such that a strength of the magnetic field at the first magnetic sensing element is different from a strength of the magnetic field at the second magnetic sensing element.
Public/Granted literature
- US20190212398A1 SIDE-BIASED CURRENT SENSOR WITH IMPROVED DYNAMIC RANGE Public/Granted day:2019-07-11
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