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公开(公告)号：US11835600B2
公开(公告)日：2023-12-05
申请号：US17807002
申请日：2022-06-15
Applicant: Infineon Technologies AG
Inventor： Rainer Markus Schaller , Volker Strutz , Jochen Dangelmaier
CPC classification number: G01R33/07 , G01R15/202 , G01R15/205 , G01R33/09
Abstract: What is proposed is a current sensor comprising a current rail and comprising a magnetic field sensor, wherein the magnetic field sensor is configured to measure a magnetic field induced by a current flowing through the current rail, wherein a first insulation layer and a second insulation layer are arranged between the current rail and the magnetic field sensor, wherein an interface between the first insulation layer and the second insulation layer is free of a contact with the current rail and/or is free of a contact with the magnetic field sensor.
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公开(公告)号：US11561245B2
公开(公告)日：2023-01-24
申请号：US17217390
申请日：2021-03-30
Applicant: Infineon Technologies AG
Inventor： Klaus Elian , Rainer Markus Schaller , Volker Strutz
Abstract: A sensor apparatus comprises an electrically conductive chip carrier comprising a busbar, a first connection and a second connection, and a differential magnetic field sensor chip which is arranged on the chip carrier and has two sensor elements. The form of the busbar is such that a measurement current path running from the first connection to the second connection through the busbar comprises a main current path and a bypass current path, wherein the main current path and the bypass current path run parallel to one another, and a bypass current flowing through the bypass current path is less than a main current flowing through the main current path. The magnetic field sensor chip is configured to capture a magnetic field induced by the bypass current.
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公开(公告)号：US11073572B2
公开(公告)日：2021-07-27
申请号：US16250747
申请日：2019-01-17
Applicant: Infineon Technologies AG
Inventor： Jochen Dangelmaier , Rainer Markus Schaller
IPC: H01L23/495 , G01R33/00 , G01R33/07 , H01L23/31 , H01L23/00
Abstract: A current sensor device may include a routable molded lead frame that includes a molded substrate. The current sensor device may include a conductor and a semiconductor chip mounted to the molded substrate. The semiconductor chip may include a magnetic field sensor that is galvanically isolated from the conductor by the molded substrate and is configured to sense a magnetic field created by current flowing through the conductor. The current sensor device may include one or more leads configured to output a signal generated by the semiconductor chip. The one or more leads may be galvanically isolated from the conductor by the molded substrate.
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公开(公告)号：US10451543B2
公开(公告)日：2019-10-22
申请号：US15349438
申请日：2016-11-11
Applicant: Infineon Technologies AG
Inventor： Thomas Mueller , Horst Theuss , Klaus Elian , Rainer Markus Schaller , Stefan Kolb
Abstract: A photo-acoustic gas sensor is disclosed. The photo-acoustic gas sensor includes a substrate, a light emitter unit supported by the substrate, the light emitter unit including a light emitter configured to emit a beam of light pulses with a predetermined repetition frequency and wavelength corresponding to an absorption band of a gas to be sensed, and a detector unit supported by the substrate, the detector unit including a microphone, wherein the beam of light pulses traverses an area intended to accommodate the gas and the microphone can receive a signal oscillating with the repetition frequency.
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公开(公告)号：US20170352638A1
公开(公告)日：2017-12-07
申请号：US15682747
申请日：2017-08-22
Applicant: Infineon Technologies AG
Inventor： Volker Strutz , Rainer Markus Schaller , Franz-Peter Kalz
CPC classification number: H01L24/29 , G01R33/0052 , H01L23/49503 , H01L23/49506 , H01L23/4951 , H01L23/49513 , H01L23/49548 , H01L23/60 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/92 , H01L27/22 , H01L2224/2929 , H01L2224/29393 , H01L2224/29499 , H01L2224/29561 , H01L2224/2957 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2224/83192 , H01L2224/83855 , H01L2224/85986 , H01L2224/92247 , H01L2924/00014 , H01L2924/15724 , H01L2924/15747 , H01L2924/30101 , H01L2224/45099 , H01L2924/00012 , H01L2924/0665 , H01L2924/00
Abstract: A semiconductor device includes a substrate, a semiconductor die, and an antistatic die attach material between the substrate and the semiconductor die. The antistatic die attach material includes a mixture of a nonconductive adhesive material and carbon black or graphite. In one example, the antistatic die attach material has a resistivity between 101 Ω·cm and 1010 Ω·cm.
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Patent Agency Ranking
公开(公告)号：US20170212036A1
公开(公告)日：2017-07-27
申请号：US15349438
申请日：2016-11-11
Applicant: Infineon Technologies AG
Inventor： Thomas Mueller , Horst Theuss , Klaus Elian , Rainer Markus Schaller , Stefan Kolb
IPC: G01N21/17
CPC classification number: G01N21/1702 , A61B5/0095 , A61B2562/0204 , G01N29/032 , G01N29/222 , G01N29/2418 , G01N29/48 , G01N33/0009 , G01N2021/1704 , G01N2291/021 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2924/00014
Abstract: A photo-acoustic gas sensor is disclosed. The photo-acoustic gas sensor includes a substrate, a light emitter unit supported by the substrate, the light emitter unit including a light emitter configured to emit a beam of light pulses with a predetermined repetition frequency and wavelength corresponding to an absorption band of a gas to be sensed, and a detector unit supported by the substrate, the detector unit including a microphone, wherein the beam of light pulses traverses an area intended to accommodate the gas and the microphone can receive a signal oscillating with the repetition frequency.
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公开(公告)号：US12203912B2
公开(公告)日：2025-01-21
申请号：US17585723
申请日：2022-01-27
Applicant: Infineon Technologies AG
Inventor： Rainer Markus Schaller , Matthias Eberl , Franz Jost
IPC: H01M50/77 , G01N33/00 , H01M8/0444
Abstract: A gas sensor includes a hollow space, a gas permeation structure which is arranged between the hollow space and the exterior space and contains a selectively gas-permeable element, wherein the hollow space is hermetically sealed with the exception of the gas permeation structure, and one or more sensor elements which are configured for detecting the presence of one or more gases in the hollow space.
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公开(公告)号：US11851322B2
公开(公告)日：2023-12-26
申请号：US17249853
申请日：2021-03-16
Applicant: Infineon Technologies AG
Inventor： Rainer Markus Schaller , Jochen Dangelmaier
CPC classification number: B81B7/007 , B81C1/00301 , G01L9/08 , B81B2201/0264 , B81B2203/0127 , B81B2207/012 , B81B2207/095 , B81C2203/0154 , B81C2203/0792
Abstract: A sensor package comprises a MEMS sensor chip, a cover arranged over a first main surface of the MEMS sensor chip, said cover being fabricated from a mold compound, and an electrical through contact extending through the cover and to electrically couple the sensor package to a circuit board arranged over the cover.
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公开(公告)号：US11837531B2
公开(公告)日：2023-12-05
申请号：US17883750
申请日：2022-08-09
Applicant: Infineon Technologies AG
Inventor： Rainer Markus Schaller
IPC: H01L23/495 , H01L25/065 , H01L23/31 , H01L23/14 , H01L23/00
CPC classification number: H01L23/49541 , H01L23/14 , H01L23/31 , H01L23/3107 , H01L23/4951 , H01L23/49506 , H01L23/49537 , H01L23/49575 , H01L24/32 , H01L24/40 , H01L24/48 , H01L25/0657 , H01L2224/32245 , H01L2224/40175 , H01L2224/48247
Abstract: A semiconductor device includes a chip carrier, a first semiconductor chip arranged on the chip carrier, the first semiconductor chip being located in a first electrical potential domain when the semiconductor device is operated, a second semiconductor chip arranged on the chip carrier, the second semiconductor chip being located in a second electrical potential domain different from the first electrical potential domain when the semiconductor device is operated, and an electrically insulating structure arranged between the first semiconductor chip and the second semiconductor chip, which is designed to galvanically isolate the first semiconductor chip and the second semiconductor chip from each other.
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公开(公告)号：US11733213B2
公开(公告)日：2023-08-22
申请号：US17247134
申请日：2020-12-01
Applicant: Infineon Technologies AG
Inventor： Rainer Markus Schaller , Matthias Eberl , Simon Gassner , Franz Jost , Stefan Kolb
CPC classification number: G01N29/2425 , G01N33/0004
Abstract: A photoacoustic detector unit comprises a housing having an opening, and also a photoacoustic transducer designed to convert optical radiation into at least one from a pressure signal or a heat signal. The photoacoustic transducer covers the opening of the housing, such that the photoacoustic transducer and the housing form an acoustically tight cavity. A pressure pick-up is arranged in the acoustically tight cavity.
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